AVS 51st International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS1-TuM

Paper PS1-TuM4
Dielectric Processes Enhancements Using Multifrequency Sheath Modulation

Tuesday, November 16, 2004, 9:20 am, Room 213A

Session: Dielectric Etching
Presenter: S.C. Shannon, Applied Materials, Inc.
Authors: S.C. Shannon, Applied Materials, Inc.
A.M. Paterson, Applied Materials, Inc.
T. Panagopoulos, Applied Materials, Inc.
D. Hoffman, Applied Materials, Inc.
J.P. Holland, Applied Materials, Inc.
D. Grimard, University of Michigan
Correspondent: Click to Email
Dual frequency capacitive discharges have become the new standard in dielectric etch processing. Typically, frequencies are selected such that bulk plasma dissociation and plasma sheath dynamics can be independently controlled. Recently, dual frequency development has focused on the interaction of the two frequencies in the sheath surrounding the plasma. In this paper, a model is presented where a symetric discharge is driven by an RF current with multiple frequency components. The impact of these multifrequency sheath dynamics on ion energy distribution and the process tunability in dielectric etch processes using this technology is presented.