AVS 51st International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS-TuP

Paper PS-TuP11
Study on Relation Between CF2 Radicals and Plasma Parameters in ICP Plasmas with Laser-Induced Fluorescence and Wave Cutoff Probe

Tuesday, November 16, 2004, 4:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: J.-H. Kim, Korea Research Institute of Standards and Science, Korea
Authors: J.-H. Kim, Korea Research Institute of Standards and Science, Korea
Y.-S. Yoo, Korea Research Institute of Standards and Science, Korea
Y.-H. Shin, Korea Research Institute of Standards and Science, Korea
K. Chung, Korea Research Institute of Standards and Science, Korea
Correspondent: Click to Email
The behavior of CF2 radical was studied in CF4 inductively coupled plasma. CF2 radical was measured using a laser-induced fluorescence method [1,2]. Absolute electron density was measured using a cutoff probe [3], which was newly developed, and the electron temperature was measured using a double probe to study relation between the electron property and CF2 radical. CF2 density is drastically changed by variations of operating pressure, ratio of mixed gases and RF source power. To examine the relation between electron density and CF2 radical, CF2 radical and electron density were measured as varying the RF power which is a major external parameter influencing to the electron density. As the RF power was increased, CF2 radical density increased in the range of low electron density and then decreased over a critical electron density. Dependence of CF2 radical density on the electron density was theoretically analyzed with rate equations. The theoretically analyzed relation between the electron density and the CF2 radical density was in good agreement with the experimental result. @FootnoteText@ [1] G. Cunge, P. Chabert and J.P. Booth, J. Appl. Phys. V89, p7750 (2001). [2] S. Hayashi, K. Kawashima, M. Ozawa, H. Tsuboi, T. Tatsumi, and M. Sekime, Sci. and Tech. Adv. Mat. V2, p555 (2001). [3] J.H.Kim, D.J.Seong, J.Y.Lim, and K.H.Chung, Appl. Phys. Lett. V83, p4725 (2003).