AVS 51st International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS-TuP

Paper PS-TuP1
CVD Chamber Cleaning by F2 Remote Plasma Processing

Tuesday, November 16, 2004, 4:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: S.C. Kang, Sungkyunkwan University, South Korea
Authors: S.C. Kang, Sungkyunkwan University, South Korea
J.Y. Hwang, Sungkyunkwan University, South Korea
N.-E. Lee, Sungkyunkwan University, South Korea
K.S. Joo, Shihwa Indus. Com, South Korea
G.H. Bae, Shihwa Indus. Com, South Korea
Correspondent: Click to Email
Cleaning of chemical vapor deposition (CVD) chamber during the deposition of SiO @sub 2@, Si @sub 3@N@sub 4@, Si, and W thin films in Si device manufacturing fabs has been carried out using perfluorocompounds (PFCs) including C @sub 2@F@sub 6@, NF @sub 3@, C @sub 3@F@sub 8@, and C @sub 4@F@sub 8@ etc. During CVD chamber cleaning using PFCs, effect of re-emitted PFCs on global warming and difficulty of cleaning the silicon oxide layers have been of great concern. F @sub 2@ cleaning is expected to get rid of the global warming effect completely and contribute to a reduction of operating costs by the use of on-site F @sub 2@ generation systems. However, adoption of F @sub 2@ CVD chamber cleaning has been limited due to high toxicity and reactivity of F @sub 2@ gas. In this study, we carried out CVD chamber cleaning experiments by F@sub 2@ remote plasma generated from a toroidal-type remote plasma source in a commercial 8-inch plasma enhanced chemical vapor deposition (PECVD) system. In this experiment, bottled F @sub 2@ gas was used. Due to difficulty of handling F @sub 2@ gas, various safety measures for storage and delivery were made. Chamber cleaning experiments of silicon oxide layers including PE-TEOS and BPSG were carried out by varying the F @sub 2@ /Ar gas flow ratio, flow rate, pressure, and temperature. Species emitted during cleaning were monitored by Fourier transformed infrared spectroscopy (FT-IR) and residual gas analyzer (RGA). Under the current experimental condition, cleaning rate was increased with F @sub 2@ gas flow rate increased. Destruction removal efficiency (DRE) of F @sub 2@ gas was calculated by evaluating the emitted F @sub 2@ gas during cleaning using residual gas analysis. Effect of various process parameters on cleaning process will be discussed in detail.