AVS 51st International Symposium
    Plasma Science and Technology Monday Sessions
       Session PS-MoP

Paper PS-MoP32
Vertical Platinum Etch Profile for Electrode of High-K Dielectric Materials with Cl@sub 2@/Ar/C@sub 4@F@sub 8@ Plasma

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: C.W. Kim, Inha University, South Korea
Authors: C.W. Kim, Inha University, South Korea
H.-Y. Song, Inha University, South Korea
Y.H. Choi, Inha University, South Korea
S.G. Yang, Inha University, South Korea
J.G. Lee, Bucheon College, South Korea
S.-G. Lee, Inha University, South Korea
B.-H. O, Inha University, South Korea
I.H. Lee, Inha University, South Korea
S.-G. Park, Inha University, South Korea
Correspondent: Click to Email
In this paper, we investigate the characteristics of the platinum dry etch using Cl@sub 2@/Ar/C@sub 4@F@sub 8@ gas with ICP(Inductively Coupled Plasma) source. Platinum is widely used as electrode of high-k dielectric materials and the vertical side wall slope of electrode is important especially in the fine pattern process for ultra large scale integration. The etch selectivity of platinum to photoresist is improved from 1:1 to 1.6:1 by C@sub 4@F@sub 8@ gas addition to Cl@sub 2@/Ar gas and this leads to very anisotropic Pt sidewall etch angle of 80° even with the photoresist masking. We studied the C@sub 4@F@sub 8@ addition effect by monitoring the variation of active plasma species with QMA(Quadruple Mass Analyzer) and analyzing the residue of etched surface.