AVS 51st International Symposium
    Plasma Science and Technology Monday Sessions
       Session PS-MoP

Paper PS-MoP3
Effects of Ar Plasma on DVS-BCB Monomer Used for Low-k Film Deposition

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: T. Wakai, Kyoto University, Japan
Authors: T. Wakai, Kyoto University, Japan
T. Shirafuji, Kyoto University, Japan
K. Tachibana, Kyoto University, Japan
Correspondent: Click to Email
Divinly siloxane bis-benzocyclobutene (DVS-BCB) is an attractive monomer because practical low-k films can be prepared by plasma polymerization of this monomer.@footnote 1@ Recently, its dissociation reaction due to electron impact has been investigated with mass spectroscopy, and fragmentation pattern in the plasma has been discussed by Kinoshita et al.@footnote 2@ However, the DVS-BCB plasma contains excited noble carrier gas and ions, and its effects are not investigated yet. Therefore, we have investigated effects of Ar plasma treatment on DVS-BCB monomer on c-Si with in situ FT-IR reflection absorption spectroscopy. ICP (13.56MHz, 200W) was used for the treatment at room temperature. Duration of the treatment was varied, and temporal change of the spectra was monitored. It has revealed that major reaction due to Ar plasma treatment is opening of benzocyclobutene ring in the monomer. Various bias voltage on the sample was examined during the treatment, which revealed that the ring opening occur even without bias voltage although a few ten eV of plasma potential exists. This means that there are important reaction paths in addition to electron impact dissociation, which can be used for triggering polymerization of DVS-BCB without high energy electrons. Details will be discussed including effects of emission from Ar plasma. This work was supported by NEDO. @FootnoteText@ [1] J. Kawahara et al, Plasma Sources Sci. Technol. 12, S80-S88 (2003). [2] K. Kinoshita et al, Proc. 25th Int. Symp. Dry Process, Nov.13-14, 2003, Tokyo (2003) No.3-01.