AVS 51st International Symposium
    Plasma Science and Technology Monday Sessions
       Session PS-MoP

Paper PS-MoP26
Deep Silicon Etch and In-Situ Passivation of Silicon Mold

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: S.-B. Jo, INHA University, South Korea
Authors: S.-B. Jo, INHA University, South Korea
S.-G. Lee, INHA University, South Korea
E.-H. Lee, INHA University, South Korea
S.-G. Park, INHA University, South Korea
B.-H. O, INHA University, South Korea
Correspondent: Click to Email
Silicon mold is attractive for polymer embossing applications, since the properties of silicon and micro-machining process have been highly characterized through the integrated circuit fabrication. In this article, we present modified Bosch process to obtain high aspect ratio silicon mold with conventional Inductively Coupled Plasma (ICP), without the need of expensive Bosch process systems. In modified Bosch process scheme, silicon etch / sidewall passivation time is much longer than commercialized Bosch process systems and process transition time was introduced between silicon etch and sidewall passivation. Etch profile is significantly varied with external parameters, such as silicon etch / sidewall passivation time, ion energy, and substrate temperature. The variation of fuorocarbon film properties was characterized for various process parameters. Deeply etched micro-structure on silicon mold was well transferred to polydimethylsiloxane (PDMS) and may be suitable for polymer embossing applications.