| AVS 51st International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
| Session PS+MS-TuA |
| Session: | 45nm Node with Panel Discussion |
| Authors: | C. Gabriel, AMD (damage) M. Hussein, Intel (scaling) C.-J. Kang, Samsung (dielectric etch) S. Wege, Infineon (silicon etch) |
| Correspondent: | email address not available |