AVS 51st International Symposium
    Plasma Science and Technology Friday Sessions
       Session PS+BI-FrM

Paper PS+BI-FrM9
The Low Damage Surface Modification of the Self-assembled monolayer by the N@sub 2@ Neutral Beam Irradiation

Friday, November 19, 2004, 11:00 am, Room 213C

Session: Plasmas in Bioscience
Presenter: Y. Ishikawa, Tohoku University, Japan
Authors: Y. Ishikawa, Tohoku University, Japan
T. Ishida, National institute of Advanced Industrial Science and Technology, Japan
S. Samukawa, Tohoku University, Japan
Correspondent: Click to Email
For the realization of future organic molecular devices, controlling surface property of molecular film, such as the electric properties of organic molecule, is quite important. To improve surface property of molecular film, fine surface modification method is highly expected. Thus, we propose the method for controlling the surface properties of organic films by applying plasma process. For this purpose, we used our nearly developed the neutral beam system.@footnote 1@ The system could prevent the charged particles and ultraviolet photons, and only the neutral particles were irradiated to the substrates. In this study, we irradiated the N@sub 2@ neutral beam to the robust self-assembled monolayers (SAMs) made from terphenyls@footnote 2@ on the gold substrate as the first attempt for neutral beam system to the organic molecular thin films. Energy of the N@sub 2@ neutral beams are at the highest 10 eV. We compared the X-ray photoelectron spectra of terphenyl SAMs before and after the N@sub 2@ beam irradiation. Then the C-N bonds were generated by the beam irradiation with maintaining the surfer molecular structure. This result indicates that the surface of the terphenyl SAMs would be replaced from carbon or hydrogen to nitrogen, and we can expect that the electric properties of the organic materials would be drastically changed by this method. @FootnoteText@ @footnote 1@ S. Samukawa, K. Sakamoto, and K. Ichki: Jpn. J. Appl. Phys., Part 2 40, L779 (2001)@footnote 2@ T. Ishida, M. Sano, H. Fukushima, M. Ishida, and S. Sasaki: Langmuir, 18, 10496 (2002).