AVS 51st International Symposium
    Organic Films and Devices Tuesday Sessions
       Session OF-TuP

Paper OF-TuP11
Chemical Conversion Patterns of the 1,7-octadien Monolayer on Si(111) Surface

Tuesday, November 16, 2004, 4:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: S.H. Lee, Nagoya University, Japan
Authors: S.H. Lee, Nagoya University, Japan
N. Saito, Nagoya University, Japan
T. Ishizaki, Nagoya University, Japan
O. Takai, Nagoya University, Japan
Correspondent: Click to Email
The organic monolayer covalently attached to silicon has been expected to have a better chemical resistivity compared to organosilane monolayer. The Si-C interface provides a good electronic property for molecular devices constructed on silicon substrate. Many researchers have reported the structural configurations and the chemical bonding states of such organic monolayers. However, scanning probe lithography on the organic monolayers has been reported scarcely. In particular, the electronic properties of nanopattern lithography have not yet been understood. In this study, we investigated the surface potential at the locally scanned area, i.e., nanopattern, onto an organic monolayer formed on a Si substrate. An oxide layer on a Si substrate was removed using chemical etching for 15min in NH4F solution. The substrate was immersed in 1,7-octadien (OD) solution heated at 120°C for 1hour. The OD molecules reacted with the hydrogen-terminated Si surface, resulting in the formation of an OD-monolayer on the substrate. Atomic force microscope (AFM) lithography on the OD-monolayers resist was performed using SPI-3800N AFM with a Si probe in contact mode by applying a positive or negative bias. The pattern on the OD-monolayers resist was fabricated by VUV irradiation thorough a mask. The chemical changes of the OD surfaces were traced by Kelvin probe force microscope (KFM), AFM and fluorescence-labeled spheres.