AVS 51st International Symposium
    Organic Films and Devices Wednesday Sessions
       Session OF+EM-WeM

Paper OF+EM-WeM4
Fabrication of High Performance O-TFT Devices with Long Term Stability by using Atmospheric Plasma Treament and Passivation Layer

Wednesday, November 17, 2004, 9:20 am, Room 304C

Session: Molecular and Organic Films and Devices - Electronics
Presenter: W.J. Kim, Yonsei University, Korea
Authors: W.J. Kim, Yonsei University, Korea
H.K. Baik, Yonsei University, Korea
Correspondent: Click to Email
We report the effect of a surface treament of the various dielectric layers by using atmospheric plasma on the device performance. We also employ the SiO based passivation layer to the top of fabricated devices with plastic-based substrates for the long term stability. With cost-effective atmospheric glide arc plasma treatment, the surface of dielectric layers was modified to fit more well to the organic active layer resulting in the high value of saturation current and field effect mobility. The O-TFT device with our SiO based passivation layer shows good device performance even after it has been exposed to Air in long period of time. Both high performace and long term stablity of the O-TFT devices could be achieved by our cost-effective method.