AVS 51st International Symposium
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP9
Growth of CNT and Tungsten Nanowires Deposited in HFCVD System

Tuesday, November 16, 2004, 4:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: M. Passacantando, University of L'Aquila, Italy
Authors: M. Passacantando, University of L'Aquila, Italy
L. Lozzi, University of L'Aquila, Italy
R. Rastelli, University of L'Aquila, Italy
S. Santucci, University of L'Aquila, Italy
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Oplay an important role in testing and understanding fundamental physical concepts, for example, the role of dimensionality and size in optical, electrical, and magnetic properties, but also hold considerable technological promise for new nanodevices applications. Furthermore the growth of these nanostructured materials directly on silicon, silicon oxide and other thin films now used in the microlectronics production process opens new possibilities for a quick application as nanodevices. Multiwalled carbon nanotubes and tungsten nanowires have been directly deposited in a hot filament chemical vapour deposition (HFCVD) system using acetylen (C@sub 2@H@sub 2@) on 3 nm of Nickel film deposited on Pt-Si@sub 3@N@sub 4@ patterned substrate. The CNT have been grown only on Si@sub 3@N@sub 4@ site, with a presence of tungsten wires on the Pt pattern. The as-synthesized products were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS) techniques. The tungsten wires, after the extraction from the deposition apparatus showed a partially oxidised status (WO@sub x@, x=1-2), smooth surface with no amorphous sheath, and a sharp-tip end with diameters in the range of 10-100 nm. The proposed growth method can be easily scaled up for the real applications.