AVS 51st International Symposium
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP29
Formation of Nanometer-scale Gap Electrodes Based on a Plasma Ashing Technique

Tuesday, November 16, 2004, 4:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: Y. Roh, Sungkyunkwan University, Korea
Authors: Y. Lee, Sungkyunkwan University, Korea
Y. Roh, Sungkyunkwan University, Korea
K.-S. Kim, Sungkyunkwan University, Korea
Correspondent: Click to Email
Realization of nano- and/or bio-electronic devices requires the formation of metal electrodes with a nanometer-scale gap. Recently the fabrications of metal electrodes with a nano gap dimension have been demonstrated by using advanced techniques such as electron-beam lithography, focused ion beam lithography, or advanced optical lithography. However, special techniques such as electromigration-induced break junction, shadow deposition, or electrochemical deposition have to carry out in order to reduce further the nanometer-scale gap between two metal electrodes formed by microlithography as above-mentioned. One of the proposed techniques to overcome a resolution limit of an optical lithography was a photoresist (PR) ashing technique, in which the minimum linewidth can be formed by ashing the PR pattern defined by the optical lithography. In this work, we proposed a noble and reproducible method to fabricate nanometer-scale gaps between two metal electrodes using PR ashing and lift-off techniques. Using this technique, we obtained metallic electrodes with a nano-gap of less than 10 nm. With this technique, the gaps between two electrodes could be easily controlled and reproduced.