AVS 51st International Symposium
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP21
Epitaxial Growth of Nisi@sub 2@ on (001)Si Inside 50-200 Nm Openings Prepared by Scanning Probe Lithography

Tuesday, November 16, 2004, 4:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: S.-Y. Chen, National Tsing Hua University, Taiwan
Authors: S.-Y. Chen, National Tsing Hua University, Taiwan
S.D. Tzeng, National Tsing Hua University, Taiwan
S. Gwo, National Tsing Hua University, Taiwan
L.J. Chen, National Tsing Hua University, Taiwan
Correspondent: Click to Email
Epitaxial growth of NiSi@sub2@ on (001)Si inside Si@sub3@N@sub4@ openings of 50-200 nm in size prepared by AFM tip-induced local oxidation has been investigated. From TEM and SEM observation, the size of the openings was found to influence significantly on the morphology of epitaxial NiSi@sub2@. As the dimension of the openings decreases, the shape transition of facetted NiSi@sub2@ from irregular polygons to inverse pyramids was found inside openings. NiSi@sub2@ facetted rods would appear as the size of the openings was further decreased. The results are attributed to the increased interface/volume ratio of silicides with decreasing size of openings and the non-uniform stress distribution within the miniature openings. As the thickness of Ni and annealing time are well-controlled, it is possible to obtain the identical NiSi2 pyramids of nano-scale even though the shape of openings is not identical.