AVS 51st International Symposium
    Nanometer-scale Science and Technology Friday Sessions
       Session NS-FrM

Paper NS-FrM6
Defect Mediated Transport in Nanostructures by Scanning Impedance Spectroscopy

Friday, November 19, 2004, 10:00 am, Room 213D

Session: Nanometer-scale Structures
Presenter: R. Shao, The University of Pennsylvania
Authors: R. Shao, The University of Pennsylvania
M.P. Nikiforov, The University of Pennsylvania
J. Vavro, The University of Pennsylvania
D.A. Bonnell, The University of Pennsylvania
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Defects and interfaces can dictate the transport properties of macroscopic structures and completely dominate the behavior of nanostructures. We have shown that Scanning Impedance Microscopy (SIM) can be used to determine local electronic structures of scattering centers in nanotubes/wires and the perturbing effect of atomic interfaces on local continuum properties. This talk will combine SIM and low temperature transport measurements to quantify the effect of defects on transport in individual nanofibers and at atomically abrupt oxide interfaces in SrTiO@sub 3@ bicrystals. In the latter case we have found a defect induced phase transition at low temperature.