AVS 51st International Symposium
    Manufacturing Science and Technology Tuesday Sessions
       Session MS-TuP

Paper MS-TuP8
Effects of Slurry Temperature on the Oxide-CMP Performance

Tuesday, November 16, 2004, 4:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: T.W. Kim, Chosun University, South Korea
Authors: W.S. Lee, Chosun University, South Korea
T.W. Kim, Chosun University, South Korea
Y.J. Seo, DAEBUL University, South Korea
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The mechanical polishing pad and chemical slurry play an important role in chemical mechanical polishing (CMP) which has recently been recognized as the most effective method to achieve global planarization in ultra large scale integrated circuit multi-level interconnections. In this paper, we have investigated CMP performance of SiO2 as a function of different temperature of slurry and pad surface. There are two ways to study the temperature effect on CMP performance: (1) by controlling the temperature of both the pad and slurry at a desired value, or (2) by adjusting only the slurry temperature and keeping the polishing pad temperature. Moreover, the relationship between the removal rate (RR) and zeta-potential as a function of slurry temperature were investigated. According to the preliminary experimental results, it appears that the observed slurry temperature dependence of RR is mainly due to the change of pad surface mechanical property with the slurry temperature. Therefore, the understanding of these temperature effects provides a foundation to optimize an oxide CMP process for ULSI multi-level interconnection technology. This work was supported by a Korea Research Foundation grant (KRF-2002-005-D00011).