AVS 51st International Symposium
    Manufacturing Science and Technology Tuesday Sessions
       Session MS-TuP

Paper MS-TuP7
Effect of Double Polishing Pad on the Shallow Trench Isolation¬Chemical Mechanical Polishing (STI-CMP) Process

Tuesday, November 16, 2004, 4:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: S.W. Park, DAEBUL University, South Korea
Authors: Y.J. Seo, DAEBUL University, South Korea
S.W. Park, DAEBUL University, South Korea
W.S. Lee, Chosun University, South Korea
S.Y. Kim, Dongbu-Anam Semiconductor Co. Inc., South Korea
Correspondent: Click to Email
Chemical mechanical polishing (CMP) technology for global planarization of multi-level inter-connection structure has been widely studied for the next generation devices. CMP process is carrying out by pressing a rotating wafer against a moving polishing pad on which suitable slurry is dispensed. Among the consumable for CMP process, especially, polishing pad set and itâ?Ts material properties play a very important role into the removal rates and global planarization ability of CMP process. In this paper, we investigated the effects of different sets of polishing pad to apply the direct shallow trench isolation (STI)-CMP process using high selectivity slurry (HSS). As our preliminary experimental results, IC1000/JR111 pad set and IC1000/subaIV pad set have the highest selectivity. Even if selectivity is high, because IC1000/SubaIV set shows the low removal rate, we could conclude that IC1000/JR111 set is more superior than IC1000/SubaIV set. Also, the wafer map of hard pad set showed the center-fast type, and soft pad set showed the edge-fast type. Through the above results, we could select the optimum polishing pad set to achieve the direct STI-CMP process without reverse moat etch step, so we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.