AVS 51st International Symposium
    Manufacturing Science and Technology Thursday Sessions
       Session MS-ThM

Paper MS-ThM8
Improving Etch Process Control with Advances in Vacuum Measurement

Thursday, November 18, 2004, 10:40 am, Room 303B

Session: Advanced Process Control
Presenter: S. Pewsey, Mykrolis Corporation
Authors: J. Sipka, Mykrolis Corporation
S. Pewsey, Mykrolis Corporation
D. Leet, Mykrolis Corporation
Correspondent: Click to Email
As each successive technology node is developed, staying the course of 'Moore's Law' has required device size scaling, and often, new materials development as well as tighter manufacturing process control, adherence to specifications and improved, tighter tolerances for chamber level devices. Process pressure repeatability at low mTorr setpoints is critical in obtaining the desired yields in Etch Processes. The process chamber pressure control system is a key component in achieving the process repeatability. At the heart of the chamber pressure control system is the Capacitance Diaphragm Gauge (CDG). If the fundamental vacuum measurement shifts or varies over time, the chamber pressure control sub-system will track this, resulting in changes in etch rate resulting in wafer lot to lot variability. A study was conducted to correlate (Etch) Process CD data with the (zero) stability of a new generation of Digital Process Vacuum Gauges. This paper will show test results of long term zero stability, process repeatability, and environmental sensitivity of a low-pressure heated digital capacitance diaphragm gauge under typical Semiconductor Etch conditions and under controlled test conditions. This paper will also address the causes of zero output shifts on Capacitance Diaphragm Gauges and design techniques utilized to minimize this effect.