AVS 51st International Symposium
    Manufacturing Science and Technology Wednesday Sessions
       Session MS+AS-WeA

Invited Paper MS+AS-WeA6
Metrology for Advanced Manufacturing

Wednesday, November 17, 2004, 3:40 pm, Room 303B

Session: Non-Destructive Analysis and Metrology for Advanced Manufacturing
Presenter: M.I. Current, Frontier Semiconductor
Correspondent: Click to Email
Metrology for process controls for manufacturing of advanced semiconductor devices faces an unprecedented number of challenges, well beyond the continued scaling to smaller transistors and denser functional arrays. Some common themes are the sharp increase in the introduction of new materials, new materials combination and interfaces and new device structures. This review will consider the metrology challenges and some new methods in four areas: (1) ultra-shallow doped junctions, including dopant activation and leakage currents, (2) stress and adhesion characteristics of metal/dielectric interfaces for gate and interconnect stacks, (3) local strain characterization of isolation structures, gates and channels as well as wafer-scale, strained materials systems and (4) bonding and layer transfer methods for integration of heterogeneous materials and devices such as, multi-level SOI wafers for logic, memory and photonic devices, 3-D packaging of functionally diverse devices and integration of MEMS/photonic structures with CMOS devices.