AVS 51st International Symposium
    MEMS and NEMS Monday Sessions
       Session MN-MoP

Paper MN-MoP2
Three-Terminal Nano-Manipulator Fabrication by Focused-Ion-Beam Chemical-Vapor-Deposition

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: M. Kawamori, University of Hyogo, CREST-JST, Japan
Authors: M. Kawamori, University of Hyogo, CREST-JST, Japan
R. Kometani, University of Hyogo, CREST-JST, Japan
S. Matsui, University of Hyogo, CREST-JST, Japan
Correspondent: Click to Email
We have demonstrated that the highly functional nano-mechanical devices with three-dimensional structure can be fabricated by using focused-ion-beam chemical-vapor-deposition (FIB-CVD). So far, we reported the nano-manipulator using electrostatic repulsion between 2 terminals with the same polarity by FIB-CVD. However, there was one disadvantage which was a high operation voltage over 300 V. To reduce an operation voltage, we have proposed a 3 terminal nano-manipulator which is composed of two external-terminals and one center-terminal. The polarity of external-terminals are different from that of a center-terminal. The principle of movement is as follows. When positive and negative voltages are applied on 2 external-terminals arranged outside and a center-terminal arranged inside, the external terminals are attracted to a center-terminal by a electrical attractive force. Features of three-terminal nano-manipulator are as follows. (1) Since the tips of two outside terminals are homo-polar, both insulator and conductive materials can be manipulated. (2) As the structure is 3 terminals, a control accuracy of operation is improved. (3) Since an electrostatic attraction force is applied, it can operate on a lower voltage than that of 2 terminal nano-manipulator. The experimental result indicates that an operation voltage of 3 terminal nano-manipulator was 60 voltage, which was a lower voltage than that of 2 terminal nano-manipulator.