AVS 51st International Symposium
    Magnetic Interfaces and Nanostructures Tuesday Sessions
       Session MI-TuM

Paper MI-TuM6
Growth and Magnetic Properties of Group-IV Dilute Magnetic Semiconductors

Tuesday, November 16, 2004, 10:00 am, Room 304A

Session: Spintronics
Presenter: Y.F. Chiang, University of California, Riverside
Authors: Y.F. Chiang, University of California, Riverside
R.K. Kawakami, University of California, Riverside
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The synthesis of magnetically-doped semiconductors is important for electronics based on spin. We utilize molecular beam epitaxy (MBE) to incorporate magnetic dopants such as Mn and Co into Ge and Si semiconductor thin films. The structural properties of the samples are characterized by in situ reflection high energy electron diffraction (RHEED), x-ray diffraction, and transmission electron microscopy (TEM). Substrate temperatures during growth are monitored by a transferable thermocouple to ensure accurate thermometry for low-temperature growth (0-250° C). Magnetic hysteresis loops are measured by superconducting quantum interference device magnetometry (SQUID) and magneto-optic Kerr effect (MOKE) over a large temperature range (5K â?" 300K) in order to determine the Curie temperature, magnetic anisotropy, and remanence. The dependence of magnetic properties on the magnetic dopant concentration and the growth temperature will be discussed.