AVS 51st International Symposium
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuM

Paper EM-TuM11
Low Resistivity Germanides

Tuesday, November 16, 2004, 11:40 am, Room 304B

Session: Contacts and Metallization
Presenter: S. Gaudet, Ecole Polytechnique de Montreal, Canada
Authors: S. Gaudet, Ecole Polytechnique de Montreal, Canada
C. Lavoie, IBM T.J. Watson Research Center
C. Detavernier, University of Ghent, Belgium
P. Desjardins, Ecole Polytechnique de Montreal, Canada
Correspondent: Click to Email
In microelectronics, because of the availability of high dielectric constant material for gate oxide, CMOS devices can now be built on pure Ge substrates in order to take advantage of the higher carrier mobility of this semiconductor. While literature is readily available on possible contacts to SiGe devices, contacts to pure Ge are much less documented. We performed a systematic study of the reaction of metals with Ge substrates to identify appropriate contact materials. Thin films of 20 different metals (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu) were deposited on amorphous Ge, Poly-Ge and Ge (100). Metal-Ge reactions were measured in situ during annealing using time resolved XRD, light scattering and resistance measurements. Among possible candidates for direct contact to Ge, two interesting monogermanides, NiGe and PdGe, form at low temperature and exhibit low resistance for a wide range of temperatures.