AVS 51st International Symposium
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuA

Paper EM-TuA8
Annealing Effect on Dielectric Properties of Ti Doped K(Ta,Nb)O@sub 3@ Thin Film using PLD

Tuesday, November 16, 2004, 3:40 pm, Room 304B

Session: Defects and Interfaces in Electronic Materials and Devices
Presenter: H.-J. Bae, University of Florida
Authors: H.-J. Bae, University of Florida
J. Sigman, University of Florida
L.A. Boatner, Oak Ridge National Laboratory
D.P. Norton, University of Florida
Correspondent: Click to Email
K(Ta,Nb)O@sub 3@ (KTN) has been widely studied for optical wave guides and tunable microwave applications. In this study, the reduction of dielectric loss by acceptor ion doping is investigated for epitaxial thin films. Acceptor doping traps electrons due to oxygen vacancies that form during oxide film growth. Epitaxial KTa@sub 0.524@Nb@sub 0.446@Ti@sub 0.03@O@sub 3@ films with 3% Ti were investigated. The KTN:Ti films were grown at 750@super o@C using pulsed laser deposition. The dielectric properties of Ti doped KTN films were measured for unannealed and annealed films. Annealing temperatures ranged from 800@super o@C and 1000@super o@C in an oxygen ambient. The dielectric properties of KTN:Ti films obtained after annealing are compared with that for as-deposited KTN:Ti film and undoped KTN films. The crystallinity, surface morphology, and electrical properties were investigated using x-ray diffraction, atomic force microscopy, and dielectric response. This latter involved capacitance measurements of as-deposited and annealed films, measured at 1MHz using interdigitated electrodes. Tunability and dielectric loss of as-deposited KTN:Ti film were determined to be 10% and 0.0134, respectively. For films annealed at 800@super o@C and 900@super o@C, the dielectric loss decreased but with a decrease in tunability as well.