AVS 51st International Symposium
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuA

Paper EM-TuA2
Characterization of Hydrogen Complex Formation in InP:Zn (100)

Tuesday, November 16, 2004, 1:40 pm, Room 304B

Session: Defects and Interfaces in Electronic Materials and Devices
Presenter: M.D. Williams, Clark Atlanta University
Authors: M.D. Williams, Clark Atlanta University
S.A. Yasharahla, Clark Atlanta University
S.C. Williams, Clark Atlanta University
N. Jallow, Clark Atlanta University
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Ultraviolet photoemission spectroscopy is used to study the kinetics of the H-Zn complex formation in Zn doped InP (100). Hydrogen injected into the material electronically passivates the local carrier concentration.@footnote 1@ Reverse-biased anneals of the InP show a dramatic change in the work function of the material with increasing temperature. Spectral features are also shown to be sensitive to sample temperature. To our knowledge, we show the first view of hydrogen retrapping at the surface using photoemission. A simpe work function analysis shows the state of passivation of the material. @FootnoteText@ @footnote 1@ W. C. Dautremont-Smith, Mat. Res. Soc. Symp. Proc. 104, 313 (1988).