AVS 51st International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThA

Paper EM-ThA5
Remote Plasma Enhanced Chemical Vapor Deposition of La2O3

Thursday, November 18, 2004, 3:20 pm, Room 304B

Session: Multifunctional Materials
Presenter: P.R. McCurdy, Colorado State University
Authors: P.R. McCurdy, Colorado State University
T. Vazquez, Colorado State University
S. Kohli, Colorado State University
E.R. Fisher, Colorado State University
Correspondent: Click to Email
Rare earth oxides, such as La@sub 2@O@sub 3@, show potential for high-k gate insulator applications. La@sub 2@O@sub 3@ has a large conduction band offset with Si(100) of 2.3 eV@footnote 1@ and a dielectric constant of ~30 eV.@footnote 2@ La@sub 2@O@sub 3@ films on Si(100) were deposited by remote plasma enhanced chemical vapor deposition (RPECVD), using lanthanum acetyl-acetonate (La(acac)), argon and oxygen. Post deposition annealing was performed to reduce carbon and hydrogen content. Film composition and characteristics were examined using x-ray photoelectron spectroscopy, spectroscopic ellipsometry and XRD. Various parameters have been studied, including gas flow rate, substrate temperature (T@sub s@), temperature of the La(acac), and plasma power. Under optimal conditions we were able to produce La@sub 2@O@sub 3@ films with less than 5% carbon content. This is the first report of La@sub 2@O@sub 3@ being deposited by RPECVD. @FootnoteText@ @footnote 1@ J. Robertson, J. Non-Cryst. Solids 303 (1) (2002) 94.@footnote 2@ A. I. Kingon, J.-P. Maria, S. K. Streiffer, Nature 406(2000) 1032. .