AVS 51st International Symposium
    Dielectrics Monday Sessions
       Session DI-MoP

Paper DI-MoP9
Structural and Optical Properties of Erbium-doped Ba@sub 0.7@Sr@sub 0.3@TiO@sub 3@ Thin Films

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: S.Y. Kuo, National Science Council, Taiwan
Authors: S.Y. Kuo, National Science Council, Taiwan
W.F. Hsieh, National Chiao Tung University, Taiwan
Correspondent: Click to Email
The Er-doped Ba@sub 0.7@Sr@sub 0.3@TiO@sub 3@ (BST:Er) thin films prepared by sol-gel technique have been investigated by means of x-ray diffraction (XRD), Raman, C-V, and photoluminescence (PL) measurements. While the sintering temperature is increased from 600°C to 700°C, the peaks of the XRD patterns become sharper and more intense, indicating better crystallinity and larger grain size. On the other hand, the crystallinity becomes worse as a result of phase separation and charge compensation mechanism when sintering temperature is above 700°C. We have shown that the addition of Er-dopant does not reduce the dielectric property of BST thin films in C-V measurement. Excitation-dependent PL studies indicate that these emission peaks do not shift with the change in excitation power, whele the integrated intensity increases exponentially with the increase in excitation power. Additionally, green emission intensities of the BST:Er films increase as the Er doping concentration increases from 1 to 3 mol%, and then quench due to the presence of clusters as doping concentration exceed 3 mol%. Besides, the improvement of the crystallinity of BST:Er films will result in the luminescence enhancement as well. These experimental results indicated that the BST:Er thin films might be a potential candidate for optoelectronics devices.