AVS 51st International Symposium
    Dielectrics Monday Sessions
       Session DI-MoP

Paper DI-MoP8
Dry Etching of HfO@sub 2@ Films by Inductively Coupled Plasma

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: S.-K. Yang, Inha University, South Korea
Authors: S.-K. Yang, Inha University, South Korea
H.-Y. Song, Inha University, South Korea
S.-G. Lee, Inha University, South Korea
B.-H. O, Inha University, South Korea
I.-H. Lee, Inha University, South Korea
C.-W. Kim, Inha University, South Korea
S.-G. Park, Inha University, South Korea
Correspondent: Click to Email
Not only deposition of high quality high-k dielectric layer but its dry etching is very important for fabrication of complete gate stack structure. In this study, 2000Å thick HfO@sub 2@ films are deposited on Si wafers for etching experiments by reactive sputtering and annealed in oxygen. Dry etching of HfO@sub 2@ is investigated in Cl@sub 2@, SF@sub 6@, HCl or Ar based ICP plasma. Etching characteristics are investigated in terms of RF powers, chamber pressures and gas compositions. It is found that physical sputtering effect enhances the formation of volatile hafnium halides. Single etching recipe is successfully used to pattern multiple layers of Pt/HfO@sub 2@/Si structure.