AVS 51st International Symposium
    Dielectrics Monday Sessions
       Session DI-MoP

Paper DI-MoP4
TiN/Ta@sub 2@O@sub 5@/PE-SiN/TiN MIM Capacitor for RF and Mixed Signal IC Applications

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: Y.S. Chung, Hynix Semiconductor Inc., Korea
Authors: Y.S. Chung, Hynix Semiconductor Inc., Korea
K.S. Kim, Hynix Semiconductor Inc., Korea
Y.S. Ryu, Hynix Semiconductor Inc., Korea
S.B. Hwang, Hynix Semiconductor Inc., Korea
C.-S. Shin, Hynix Semiconductor Inc., Korea
S.-G. Park, Hynix Semiconductor Inc., Korea
J.K. Lee, Hynix Semiconductor Inc., Korea
Correspondent: Click to Email
Ta@sub 2@O@sub 5@ / PE-SiN MIM capacitors with high capacitance density of 4.7 fF/µm @super 2@ for mixed-signal / RF applications were originally integrated by adopting 120Å-thick-PE-SiN as a barrier layer between bottom electrode and 80-Å-thick MOCVD Ta@sub 2@O@sub 5@ layer. Inserting PE-SiN layer resulted in dramatic reduction of leakage current at -3.3 V from 8.0E-5 A/cm@super 2@ with only Ta@sub 2@O@sub 5@ film to 9.3E-8 A/cm@super 2@ with Ta@sub 2@O@sub 5@/PE-SiN layers. We attribute the huge reduction in leakage current for the laminated structure that the PE-SiN layer provides high barrier height as well as a physical diffusion barrier against oxygen into the bottom electrode. These laminated MIM capacitors also showed good linearities of capacitance with 302 ppm/V@super 2@, 125 ppm/V, and 30.7 ppm/°C as well as an excellent matching property with 0.79 % µm. Breakdown voltage of capacitor was about 6 MV/cm and the life time (time-to-breakdown) of Ta@sub 2@O@sub 5@/PE-SiN MIM capacitor at 3.7 V and 25°C was 198000 years. Quality factor of 55 and capacitance density of 5.08 fF/µm @super 2@ at 2.4GHz were obtained for 10X10 µm @super 2@ MIM capacitor.