AVS 51st International Symposium
    Dielectrics Monday Sessions
       Session DI-MoP

Paper DI-MoP11
Effect of Pb(Zr@sub 0.52@Ti@sub 0.48@)O@sub 3@ Buffer Layers on the Fatigue Resistance of Pb(Zr,Ti)O@sub 3@-Pb(Mn,W,Sb,Nb)O@sub 3@ Thin Films

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: S.H. Lim, Yonsei University, Korea
Authors: S.Y. Lee, Yonsei University, Korea
S.H. Lim, Yonsei University, Korea
E.S. Lee, Yonsei University, Korea
H.W. Chung, Yonsei University, Korea
Correspondent: Click to Email
The effect of a Pb(Zr@sub 0.52@Ti@sub 0.48@)O@sub 3@ (PZT) buffer layer on a perovskite Pb(Zr,Ti)O@sub 3@-Pb(Mn,W,Sb,Nb)O@sub 3@ (PMWSN) thin film deposited on a Pt/Ti/SiO@sub 2@/Si substrate was examined. The film having stoichiometric PMWSN composition was deposited directly on the Pt/Ti/SiO@sub 2@/Si substrate by pulsed laser deposition. While as-grown PZT-PMWSN thin films have poor fatigue resistance, PZT-PMWSN thin films with PZT buffer exhibit good fatigue resistance. The insertion of PZT buffer layer contributes to enhance the crystallinity of PZT-PMWSN and it can protect to diffuse the accumulated charges at the interfaces between electrodes and the films.