AVS 51st International Symposium
    Dielectrics Thursday Sessions
       Session DI+PS-ThA

Invited Paper DI+PS-ThA6
Crystalline Oxides on Semiconductors, from Interface Structure to Electrical Properties

Thursday, November 18, 2004, 3:40 pm, Room 304B

Session: Oxides on Semiconductors
Presenter: F.J. Walker, University of Tennessee
Authors: F.J. Walker, University of Tennessee
C.A. Billman, Penn State University
M. Buongiorno-Nardelli, North Carolina State University
R.A. McKee, Oak Ridge National Laboratory
Correspondent: Click to Email
From the point of view of synthesis using molecular beam epitaxy (MBE) and understanding using tools developed from first principle theory like density functional theory (DFT), a metal oxide semiconductor (MOS) device can be described as an epitaxial superlattice where each atomic layer is well-defined. This view is becoming increasingly germane to device physics as dimensions are scaled down to the atomic level. In this paper we discuss the fundamental interplay of the physical structure, as determined by reflection high energy electron diffraction (RHEED), and the electrical properties, as determined by frequency-dependent electrical impedance measurements and x-ray photoelectron spectroscopy (XPS), for the crystalline oxide on semiconductor system. We show that an interface phase is particularly important to structure and electrical properties for alkaline earth oxides grown on silicon and germanium. The interface phase begins as a surface phase of strontium silicide and transforms to an interface phase through a structural transition. The final structure and composition of the interface phase determines the band offset, interface state density and serves as a template for the epitaxial growth of the alkaline earth oxides. Office of Basic Energy Sciences, U.S. Department of Energy at Oak Ridge National Laboratory under contract DE-AC05-00OR22725 with UT-Battelle, LLC and at the University of Tennesssee under contract DE-FG02-01ER45937.