AVS 51st International Symposium
    Applied Surface Science Tuesday Sessions
       Session AS-TuM

Paper AS-TuM5
XPS Chemical Depth Profiling Using C@sub 60@ Ion Beams

Tuesday, November 16, 2004, 9:40 am, Room 210A

Session: Electron Spectroscopies
Presenter: N. Sanada, ULVAC-PHI, Inc., Japan
Authors: N. Sanada, ULVAC-PHI, Inc., Japan
A. Yamamoto, ULVAC-PHI, Inc., Japan
H. Iwai, ULVAC-PHI, Inc., Japan
J.F. Moulder, Physical Electronics
R. Oiwa, ULVAC-PHI, Inc., Japan
Y. Ohashi, ULVAC-PHI, Inc., Japan
Correspondent: Click to Email
XPS is one of the most common analytical techniques which can be applied to the chemical analysis of a wide range of materials such as organic polymers, ceramics, metals and semiconductors. However, depth profiling with XPS requires sputtering with ion beams, which are well known to induce sample damage and have the constraint of sample chemical information being lost. Recently, we have applied a buckminsterfullerene (C@sub 60@) ion beam for depth profiling during XPS analysis[1]. A practical sputter rate of 2.4 nm / min. for SiO@sub 2@ was obtained with a sputtered area of 5 mm x 5 mm using a 5 kV C@sub 60@ ion beam. Extremely low sputtering degradation of organic polymers such as polytetrafluoroethylene[1], a polyester, a gelatin, and a latex [2] were observed under these conditions. In the meantime, the carbon contaminants derived from the C@sub 60@ ion beam varied under different sputter conditions. We studied the beam condition using a thermally oxidized SiO@sub 2@ film sample to minimize carbon residue determined by XPS. The quantities of carbon residue in the SiO@sub 2@ film reduced from 85 at% to 0.2 at% as the beam energies were modified from 2 keV to 30 keV. The incidence angle of the ion beam also affected the carbon residue in the film. XPS chemical depth profiling with C@sub 60@ sputtering applied to organic thin films will be discussed in this presentation. [1] N. Sanada et al., Surf. Interf. Anal., 36, 280 (2004). [2] N. Sanada et al., Extended Abstracts 51st Spring Meeting, 2004; Jpn. Soc. Appl. Phys. Rel. Soc. 29p-YD2.