AVS 51st International Symposium
    Applied Surface Science Thursday Sessions
       Session AS-ThM

Paper AS-ThM6
ALD and MOCVD Growth of High K Dielectric Al and Hf Films Studied by Parallel Angle Resolved XPS (PARXPS)

Thursday, November 18, 2004, 10:00 am, Room 210A

Session: High-k Dielectrics
Presenter: R.K. Champaneria, Thermo Electron Corporation, UK
Authors: R.K. Champaneria, Thermo Electron Corporation, UK
P. Mack, Thermo Electron Corporation, UK
J. Wolstenholme, Thermo Electron Corporation, UK
R.G. White, Thermo Electron Corporation, UK
Correspondent: Click to Email
XPS has been identified as being a suitable technique for the characterisation of surfaces and ultra thin layers encountered in semiconductor device fabrication. The extension of this technique to angle resolved XPS, ARXPS allows quantification of elemental and chemical state concentrations in the region of 5 to 10nm, a thickness that is well matched with the gate dielectric thickness currently used. By using maximum entropy calculations it is possible to generate non-destructive atomic concentration depth distribution plots from ARXPS data. These plots show the integrity of a film as well as the behaviour of interfacial layers. This paper looks at Al and Hf films grown by ALD and MOCVD processes. It shows differences in the state of the grown or deposited film as well as changes to the interfacial layer depending on how the film is grown and the thickness of the film. In addition, surface pre-treatment is also found to have a dramatic affect on the nature and role of the interfacial layer For Al and Hf multilayer films the integrity, thickness, preferential growth and the role of the interfacial layer are also investigated.