AVS 51st International Symposium
    Applied Surface Science Thursday Sessions
       Session AS-ThM

Paper AS-ThM10
XPS and SIMS Analysis of HfSiON Films

Thursday, November 18, 2004, 11:20 am, Room 210A

Session: High-k Dielectrics
Presenter: S. Miwa, Sony EMCS Corp., Japan
Authors: S. Miwa, Sony EMCS Corp., Japan
S. Kusanagi, Sony EMCS Corp., Japan
Y. Murakami, Sony EMCS Corp., Japan
H. Kobayashi, Sony EMCS Corp., Japan
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Nitrided Hafnium-silicate (HfSiON) is one of the promising materials for high-k gate dielectrics in advanced CMOS LSI. This material is so new that we have to investigate not only its electrical performance but also its chemical and physical properties. X-ray Photoelectron Spectroscopy (XPS) is the conventional technique for analyzing the chemical composition of thin films. We have found that XPS can also confirm the presence of phase separation in HfSiON films from the peak shift of the O1s signal. Secondary Ion Mass spectrometry (SIMS) is the most frequently used method to detect impurities in thin films and semiconductor substrates. In the case of high-k films grown by atomic-layer deposition or metal-organic chemical vapor deposition, it is necessary to use SIMS to determine whether H or C from precursor has been incorporated. SIMS can also be used N distribution in HfSiON films. However, it is difficult for conventional SIMS to observe the diffusion of Hf from HfSiON film to the Si substrate. Hf is moved from the film to the Si substrate by the probe ion beam, so we have employed backside-SIMS to observe Hf diffusion and obtain the precise Hf distribution near the HfSiON/Si interface.