AVS 51st International Symposium
    Applied Surface Science Monday Sessions
       Session AS-MoP

Paper AS-MoP7
Carbon Mediation on the Growth of Self-Assembled Ge Quantum Dots on Si (100) by Ultra High Vacuum Chemical Vapor Deposition

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: P.S. Chen, Electronics Research & Service Organization, Industrial Technology Research Institute, Taiwan
Authors: P.S. Chen, Electronics Research & Service Organization, Industrial Technology Research Institute, Taiwan
S.W. Lee, Industrial Technology Research Institute, Taiwan
M.-J. Tsai, Electronics Research & Service Organization, Industrial Technology Research Institute, Taiwan
C.W. Liu, Industrial Technology Research Institute, Taiwan
Correspondent: Click to Email
The growth of self-assembled Ge quantum dots (QDs) with carbon mediation on Si (100) by a hot wall ultra-high-vacuum chemical vapor deposition system with different growth temperatures and surfactant gas flow rates was investigated. The ethylene (C@sub 2@H@sub 4@) and methylsilane (SiCH@sub 6@) gas were as surfactants prior to the growth of Ge QDs, respectively. Small dome-like Ge QDs were observed after carbon treatment as compared to the hut shaped Ge cluster without any carbon pre-treatment at 550 °C. Those dome-like Ge QDs have a mean base width and height of about 40 and 5 nm, respectively, and the density is about 6.7 ï,´ 10@super 9@ cm@super 2@ at the growth temperature of 550 °C. Comparison with boron mediation, strong Câ?"H bonds during the epitaxy growth play different roles and lead to this dramatic modification of Ge QDs morphologies. Furthermore, multifold Ge/Si layers were also carried out to enhance the emission intensity with first Ge layer treated by C@sub 2@H@sub 4@) and avoid the generation of threading dislocations.