AVS 51st International Symposium
    Applied Surface Science Monday Sessions
       Session AS-MoP

Paper AS-MoP22
Surface Planarization Characteristics of WO3 Thin Film for Gas Sensing

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: P.J. Ko, Chosun University, South Korea
Authors: W.S. Lee, Chosun University, South Korea
P.J. Ko, Chosun University, South Korea
Y.J. Seo, DAEBUL University, Korea
Correspondent: Click to Email
There has been an increasing interest in the material and electrical properties of inorganic compound that are insulators at low temperature, but are good conductors at high temperature. In particular, n-type semiconductors such as SnO2, WO3, TiO2 and ZnO have extensively been used for detecting reduction gases. For the applications of gas sensors, it is necessary to have a microstructure with small grain size yielding large ratio of the surface area to the bulk. Also, the surface roughness deteriorates light reflection, pattern resolution, and device performance because they are dependent on surface morphology or roughness. Therefore, it is important to control the microstructure and surface morphology for the advanced sensor application. Chemical mechanical polishing (CMP) process is a useful guideline for improving the surface roughness. In this paper, we investigated the CMP effects on the surface morphology of WO3 thin films prepared by RF sputtering system. In order to compare the polishing characteristics of WO3 thin film, we discussed CMP removal rate (RR) and within-wafer non-uniformity (WIWNU%), particle size distribution, and the microstructures of surface and cross-sectional layer by atomic force microscopy (AFM) analysis. And the effects of added oxidizer contents on the WO3 CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity. This work was supported by a Korea Research Foundation grant (KRF-2002-005-D00011).