AVS 51st International Symposium
    Applied Surface Science Friday Sessions
       Session AS-FrM

Paper AS-FrM4
High Spatial Resolution XPS Analysis of Focused Ion Beam Irradiated Specimens

Friday, November 19, 2004, 9:20 am, Room 210A

Session: FIB and Novel Ion Analysis Methods
Presenter: K.M. Archuleta, The University of New Mexico
Authors: J.L. Fenton, The University of New Mexico
K.M. Archuleta, The University of New Mexico
J.E. Fulghum, The University of New Mexico
D.P. Adams, Sandia National Laboratories
M.J. Vasile, Sandia National Laboratories
Correspondent: Click to Email
Focused ion beams (FIB) are utilized in applications ranging from the preparation of samples for SEM and TEM analysis to machining of micro-tools. Despite their widespread use, there have been few detailed studies identifying how ion bombardment affects the chemistry of the near-surface region. The goal of this project is to assess the impact of Ga+ resulting from FIB preparation. High energy (30 keV) focused ion beam sputtering was first used to mill >100 µm wide features in Si, C and GaAs substrates. Both quantitative, high spatial resolution imaging and spectra-from-images methods were then used to characterize surface chemical distributions. The Ga distribution on the surface was determined in each case, and the impact of implanted gallium on surface oxidation was evaluated. The change in surface stoichiometry with ion dose (from approximately 10@super 15@ - 10@super 18@ ions/cm2) is also discussed. Atomic force microscopy and TEM have been used to investigate the evolution of morphology with ion dose so to aid the interpretation of XPS data.