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*Hover mouse over buttons as some buttons display additional links
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Deadlines |
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Housing:
September 18,
2007 |
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Symposium:
September 24,
2007 |
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Technical Program Descriptions
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TOPICAL CONFERENCES &
SPECIAL SESSIONS LINKS |
The 54th AVS International
Symposium and Exhibition will be held at the Washington State Convention
Center, Seattle, WA from 14-19 September 2007. Given the number of abstracts
submitted, the strength of their technical content, and diversity of
technical themes for the Seattle meeting, we expect very strong
participation/ attendance. (Last year over 2500 registrants from academia,
industry, and government attended.) The meeting, which is synopsized below,
features a dynamic program of 121 technical sessions plus 2 poster sessions
comprising over 1300 papers in the forefront of materials, interfaces, and
processing research. Distinguished invited speakers, leaders in their
respective research areas, are featured in many of the technical sessions.
We’ve added Exhibitor Workshop sessions where one can learn the latest AVS-related
technical/technological advances in the marketplace. We are certain you will
learn something from the programming at the 54th AVS meeting that will
enhance you professionally. We look forward to your participation
Advanced Surface Engineering
The Advanced Surface
Engineering Division (SE) Program is expanding its interest in new
materials, technologies, characterization, manufacturing, applications, and
fundamentals of surface engineering. This year, the program starts on Monday
morning with a session focusing on the interrelationships between synthesis,
structure, and properties of hard and nanocomposite coatings, with invited
presentations from both industry and academia, focusing on the industrial
scale coating deposition (J. Vetter, Sulzer Metaplas GmbH, Germany) and the
atomistic processes during layer deposition (I. Petrov, University of
Illinois), respectively, followed in the afternoon by a session on the
emerging pulsed plasma technique to create highly ionized deposition, with
invited talks by L. Martinu and A.P. Ehiasarian. The session on “Glancing
Angle Deposition” on Tuesday morning includes presentations from the world
leaders in this new nanostructure growth technique, with an invited talk by
M.J. Brett from the Univ. of Alberta. The afternoon session on “Naturally
and Artificially Nanolaminated Coatings” features two invited presentations
on MAX phases by J.M. Schneider and H. Högberg, and more contributed talks
on glancing angle deposition. The Wednesday morning session on
“Photocatalytic Coatings” will host various contributed presentations
focusing on synthesis and reactivity of TiO2 coatings and related materials,
and includes invited talks by K.A. Gray from Northwestern University on nano-scale
photocatalytic films and by A. Fujishima from the Kanagawa Academy of
Science and Technology on the present and future of photocatalytic coatings.
In addition, the Advanced Surface Engineering Division sponsors a poster
session on Tuesday evening and co-sponsors a session on “Friction and Wear
of Engineered Surfaces” on Friday morning.
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CODE |
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SESSION |
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SE-MoM
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Hard and Nanocomposite
Coatings: Synthesis Structure, and Properties
I. Petrov, Univ. of Illinois, Urbana-Champaign J. Vetter, Sulzer Metaplas
GmbH, Germany |
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SE+PS-MoA
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Pulsed Plasmas in Surface
Engineering
A.P. Ehiasarian, Sheffield Hallam Univ., UK
L. Martinu, Ecole Polytechnique, Canada |
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SE-TuM |
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Glancing Angle Deposition
M.J. Brett, University of Alberta, Canada |
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SE-TuA
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Naturally and Artificially
Nanolaminated Coatings H. Högberg, Linköping University, Sweden J.M.
Schneider, RWTH Aachen Univ., Germany |
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SE-TuP |
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Advanced
Surface Engineering Poster Session |
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SE-WeM |
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Photocatalytic Coatings
A. Fujishima, Kanagawa Academy of Science and Technology, Japan K.A.
Gray, Northwestern University |
Applied Surface Science
The Applied Surface
Science Division contains a solid program of traditional sessions and
provides a strong showing of papers in exciting new topics that expand the
range of the division. We have an excellent array of invited talks,
contributed talks, and poster presentations. The program opens with two
special sessions to honor the seminal and sustained contributions of Cedric
Powell (NIST) and Martin Seah (NPL) in advancing state-of-the-art
quantitative surface analysis. D. Baer will open the first session focused
on Electron Spectroscopies with a summary of progress to date and needs for
the future. C. Powell will discuss advances that have been made to calibrate
instruments, assess surface sensitivity, and account for elastic scattering
of the signal electrons. J.C. Vickerman will open the second special session
focused on Ion Spectroscopies by describing the use of cluster ion beams and
how they have enhanced the capabilities of SIMS in biomaterial analysis. M.
Seah will then discuss the development of models predicting secondary ion
yield as they apply to these new cluster ion sources. L. Renaud will
continue with a talk on the emerging technique of atom probe microscopy, a
method for atomic scale 3-D elemental mapping.
One of the great challenges for
bioengineering is to understand the surface structure and chemistry of
biological and functional materials. D.W. Moon will discuss recent research
aimed at understanding the surface chemistry of cells. New analytical
equipment and high-speed computing on desktop computers opens the
possibility of three-dimensional analysis with new and emerging techniques.
C.F. Kisielowski (LBNL) will discuss the challenges and promise for electron
tomographic analysis of materials, atomic resolution with chemical
specificity. P.S. Weiss will continue with a discussion of how the scanning
tunneling microscope is used to exploit molecular interactions in order to
form precise molecular assemblies, nanostructures, and patterns. C.
Eggleston will discuss the use of optical spectroscopies to study natural
geochemical systems at the molecular level through the investigation of the
solid-liquid interface. P.T. Lillehei will address the modification of the
surfaces of materials of aerospace platforms. Finally, P.V. Braun will
describe the fabrication of complex planer and 3-dimensional structures for
control of photon, electron and chemical transport.
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Division Sponsors |
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CODE |
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SESSION |
AS-MoM
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Quantitative
Surface Analysis I. Electron Spectroscopies: (Honoring the
contributions of Martin Seah, NPL, & Cedric Powell, NIST)
D.R. Baer, Pacific Northwest National Lab. C.J. Powell, NIST
J. Walton, The University of Manchester, UK |
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AS-MoA |
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Quantitative
Surface Analysis II. Electron Spectroscopies: (Honoring the
contributions of Martin Seah, NPL, & Cedric Powell, NIST)
L. Renaud, CAMECA, France M.P. Seah, National Physical Lab.,
UK J.C. Vickerman, The Univ. of Manchester, UK |
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AS+BI+NS-TuM |
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Surface Analysis
and Related Methods for Biological Materials
D.W. Moon, Korea Research Institute of Standards and Science |
AS-TuA
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3-Dimensional
Characterization
C.F. Kisielowski, Lawrence Berkeley Nat. Lab. |
AS-TuP
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Aspects of Applied Surface Science Poster Session |
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AS-WeM |
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Chemical Imaging
at High Spatial Resolution and Nanoscale Materials
C.M. Eggleston, University of Wyoming P.T. Lillehei, NASA
Langley Research Ctr P.S. Weiss, The Pennsylvania State Univ. |
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AS+BI+NS-WeA |
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Fabrication and
Characterization of Functional Soft Material Surfaces
P.V. Braun, U. of Illinois, Urbana-Champaign |
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AS-ThP |
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Aspects of Applied Surface Science II Poster Session |
Biomaterial
Interfaces
In the tradition of the
Biomaterial Interfaces Division (BID), a broad technical program has been
established, incorporating fundamental bio-interfacial analytical
techniques, nanobiomaterial synthesis, micro-fabrication and fluidics,
interfacial phenomena, complex biological systems, applied technologies and
devices. The program includes sessions devoted to a wide range of
biomaterial interfaces from macromolecular (protein, DNA) to supramolecular
(phospholipid bilayer membranes) to cellular. The BID technical program
seeks to provide a forum that explores the current challenges at the
interface of materials, biological systems, technique development and
surface science. Progress in biotechnologies, biomedical devices, prominent
industrial problems in the environment and medicine, and methods to evaluate
and interrogate complex biological system-interfaces is the primary
objective. Advances in materials science, instrumentation, theoretical
models, and practical bio-interfacial capabilities continue to be emphasized
in this forum. The BID is participating in the new programmatic formalism of
AVS cross-cutting Featured Topics in Tribology and Plasmonics Topical
Conference. In the Tribology area, BID is co-sponsoring a session on
Bio-lubrication, Sensing and Adhesion; in the Plasmonics area, BID sponsors
a session on Plasmon-Mediated Biosensing. BID has also assembled a new,
featured BID Topical Conference on Marine Biofouling.
The Biomaterial Interfaces
Division (BID) has proudly opened the AVS International Meeting with its
Sunday afternoon Plenary Session (BP) for years. The event serves to provide
an open venue for interdisciplinary exchange, where new, inspiring and
emerging ideas in science and technology are presented and discussed as
approaches to critical societal problems. The Plenary Session emphasizes
talks geared toward a general AVS audience and is open to all in order to
promote interactions necessary to move fields forward through
“out-of-the-box” thinking. This year’s three plenary lectures will present
recent technological approaches to the daunting problems of addressing
public health needs on a global scale. Thus, the Plenary Session on Global
Health Technologies will open with a talk describing forward-looking methods
of solving problems associated with common human parasites such as those
that cause malaria (R. Darvasula, Univ. of New Mexico). The session then
moves specifically toward diagnostics technologies including low cost
methods for diagnosing HIV infection (W. Rodriguez, Harvard Univ. Medical
School). The Plenary Session wraps up with a talk closely related to surface
science, measurement and device technologies with P. Yager, (Univ. of
Washington) presenting on the development of a new multiplexed, low-cost
point-of-care diagnostic system for use in the developing world. These
plenary lectures provide a spectrum of technological approaches for
addressing one of the most pressing and difficult challenges facing our
modern global society.
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CODE |
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SESSION |
BP-SuA
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Global Health
Technologies R.V. Durvasula, U. of New Mexico School of Medicine
W.R. Rodriguez, Harvard Medical School P. Yager, University of
Washington |
BI-TuM
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Proteins at Interfaces
D.L. Elbert, Washington University J.W. Heinecke, University of
Washington |
BI-TuA
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Engineered
Cellular Interfaces
K.D. Hauch, University of Washington K.K. Parker, Harvard
University |
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BI-TuP |
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Biomaterials Interfaces Poster Session |
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BI-WeM |
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Nano-Engineered
Biointerfaces
X. Gao, University of Washington S.H. Pun, University of
Washington |
BI-WeA
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Nucleic Acid
Sequencing and Technology
A.E. Barron, Stanford University J.S. Edwards, University of
New Mexico |
BI-ThM
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Biomimetic
Phospholipid Interfaces
K. Hristova, Johns Hopkins University A. Parikh, University
of California, Davis |
BI+AS+NS-ThA
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Surface Analysis
and Related Methods for Biological Materials
S.G. Boxer, Stanford University |
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BI-ThP |
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Biomaterial Interfaces Poster Session |
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BI-FrM |
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Microbioanalytical Systems
F.A. Gomez, California State U., Los Angeles B.A. Parviz,
University of Washington |
Electronic Materials
and Processing
The Electronic Materials
(EM) and Processing Division sponsors sessions on electronic materials
growth, processing and characterization. The technical sessions and posters
cover the areas of compound semiconductors (including zinc oxide), wide
band-gap semiconductors, semiconductor contacts, high-K dielectrics, complex
oxides, semi-conductor nanostructures for electronics/optoelectronics,
organic electronics and molecular electronics. We are also co-sponsoring a
special topical session on renewable energy and regular sessions with the
Surface Science, Thin Films, and Magnetic Interfaces and Nanostructures
Divisions.
The EM Program starts on Sunday
afternoon with a special topical conference on renewable energy. The main
technical program for EM starts on Monday morning with a session on Organic
Electronics Materials and Devices, featuring an invited talk by R.A. Street
of the Palo Alto Research Center (PARC). The Monday afternoon session will
introduce the topics of Semiconductor Nanostructures for Electronics and
Optoelectronics. A Molecular Electronics session, featuring an invited talk
by J. Kushmerick of NIST, is scheduled for Tuesday morning. On Tuesay
afternoon, the Semiconductor Nanostructures for Electronics and
Optoelectronics topic will continue, in a session featuring the Medard W.
Welch Award lecture presented by J. Tersoff of IBM T. J. Watson Center, as
well as an invited talk by J. Xu from Pennsylvania State University.
The Wednesday morning session
will address Contacts, Interfaces and Defects in Semiconductors, and
includes an invited talk by R. Okojie of NASA. On Wednesday afternoon, a
session on Growth and Characterization of Complex Oxides features an invited
talk by D. G. Schlom of Pennsylvania State University. A Zinc Oxide session,
with an invited talk by D. C. Look of Wright State University, is scheduled
for Thursday morning. The Thursday afternoon session is on High-K/High
Mobility Substrates and Power Electronics, and features an invited talk by
K.D.T. Ngo of Virginia Tech. The EMPD poster session will be held on
Thursday, starting at 5:30 pm. The EMPD sessions conclude on Friday morning
with a session on Hafnium-Based Dielectrics and Their Interfaces, featuring
an invited talk by S. Samavedam of Freescale.
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CODE |
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SESSION |
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EM-MoM |
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Organic Materials and Devices
R.A. Street, Palo Alto Research Center |
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EM+NS-MoA
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Semiconductor Nanostructures
for Electronics and Optoelectronics I |
EM-TuM
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Molecular
Electronics
J.G. Kushmerick, NIST |
EM+NS-TuA
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Semiconductor Nanostructures
for Electronics and Optoelectronics II
J. Tersoff, IBM T.J. Watson Center* J. Xu, Pennsylvania State University |
EM-WeM
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Contacts, Interfaces and
Defects in Semiconductors
R.S. Okojie, NASA Glenn Research Center |
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EM-WeA |
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Growth and
Characterization of Complex Oxides
D.G. Schlom, Penn State University |
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EM-ThM |
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Zinc Oxide
D.C. Look, Wright State University |
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EM-ThA |
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High-K/High Mobility
Substrates and Power Electronics
K.D.T. Ngo, Virginia Tech P.D. Ye, Purdue University |
EM-ThP
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Electronic Materials &
Processing Poster Session |
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EM-FrM
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Hf-based Dielectrics and
Their Interfaces |
Magnetic Interfaces and Nanostructures
The Magnetic Interfaces
and Nanostructures (MIN) Division will present a series of symposia
highlighting recent advances in magnetic nanostructures/nanoparticles, thin
films, magnetic transport, and magnetic imaging/spectroscopy. Rapid
advancement in these areas has fueled intensive growth in magnetic
recording, magnetic sensors, and magneto-electronics. Exciting new advances
in magnetic imaging and spectroscopy are pushing the boundaries on our
understanding of magnetic materials from the micro- to nano-scale.
The MIN Division will host five
oral sessions including two joint sessions with the Electronic Materials
Program (EM) and one joint session with the Thin Film Division. We also host
the Leo M. Falicov Award competition for the best graduate student research
and presentation in this division. The finalists are selected on the basis
of advisor recommendations and the quality of the submitted abstracts. The
five finalists are: S.W. Cho, Seoul National University; J. R. Skuza, the
University of Toledo; J. P. Strachan, Stanford University; M. J. Walock, the
University of Alabama; D. S. Wisbey, University of Nebraska-Lincoln.
Three judges will select the
winner of the Falicov Award based on the quality of the research and the
presentation. The award will be presented during the break in the Thursday
afternoon session.
On Wednesday morning, we will
begin the MIND Program with a session on Magnetic Thin Films and
Nanostructures. Talks by the invited speakers include recent progress of
surface magnetism of half-metallic materials, and interaction-induced
collective behavior in magnetic nanodot assemblies. This session emphasizes
the fundamental aspects of magnetic properties of low-dimensional and
nanostructured materials. The Wednesday afternoon session focuses on
progress in magnetic imaging and spectroscopy. The invited speakers will
introduce two promising techniques for imaging magnetic structures with the
best time and spatial resolution. Both morning and afternoon sessions on
Thursday focus on the latest research on magnetic semiconductors. The
morning begins with an invited talk that reviews the standard (III,Mn)V
dilute magnetic semiconductor systems and extrapolates away from them toward
new types of semiconductors. An invited talk also begins the afternoon
session, and discusses Mn-doped group IV semiconductors. The contributed
talks cover a myriad of disparate systems that range from Mn-doped CdSe
quantum dots to transition-metal doped Ga2Se3 to various oxide-based
magnetic semiconductors.
The last oral session, on Friday
morning, covers spin injection, spin transfer and spin-dependent tunneling
in systems ranging from novel organic to oxide systems. There are three
invited talks in this session to cover each of the three topics. These
studies illustrate potential new materials for device applications.
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CODE |
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SESSION |
MI-WeM
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Magnetic Thin Films
and Nanostructures
S.J. Jenkins, University of Cambridge, UK M.-T. Lin, National
Taiwan University |
MI-WeA
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Nanomagnetic Imaging and
Spectroscopy Y. Acremann, PULSE Ctr., Stanford Synchrotron Radiation
Laboratory K. Kern, Max-Planck-Institut für Fest- körperforschung, Germany |
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MI-ThM |
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Magnetic Semiconductors I
A.H. MacDonald, Univ. of Texas at Austin |
MI-ThA
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Magnetic Semiconductors II
Z. Zhang, Oak Ridge National Laboratory and University of Tennessee |
MI-FrM
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Spin Injection, Transfer, and
Tunneling
M.E. Flatté, The University of Iowa P. LeClair, University of Alabama
S.E. Russek, NIST |
Manufacturing
Science and Technology
In the 21st century,
manufacturing will continue to drive a sizeable percentage of the world’s
gross national product and will provide the bridge for spanning fundamental
sciences and commercial production of the high technology products. The MSTG
is continuing to expand its efforts to include all areas of nano-manufacturing
while main-taining its core competence in semiconductor manufacturing. As
part of the 54th International Symposium of AVS, the focus for the
Manufacturing Science and Technology Group will be to explore nano-manufacturing
research areas across a broad spectrum of the high technology industries.
The MSTG will co-sponsor a Topical Conference on Nano-manufacturing which
will hold an all invited session covering the critical topic of “Beyond CMOS–new
manufacturing approaches for “nano” information technology.” We will hold
two sessions. The first session, Metrology and Characterization for
Manufacturing, will be held Thursday morning. It features two invited
presentations covering new materials characterization methods which are
moving toward routine applicability for manufacturing. These are atom probe
and He ion microscopy. The second session is on MEMS and NEMS
Manufacturing. The two invited talks cover the important area of the
role of silicon semiconductor manufacturing facilities in MEMS
manufacturing.
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CODE |
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SESSION |
MS-TuA
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Metrology and
Characterization for Manufacturing
T. Kelly, Imago Scientific Instruments J. Notte, ALIS Corporation (Carl
Zeiss SMT) |
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MS-ThA |
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MEMS Manufacturing
J.D. Evans, Defense Advanced Research Projects Agency (DARPA) G.D.
Winterton, Texas Instruments Inc. |
MEMS and NEMS
The MEMS and NEMS Program
will highlight recent advances in the development of functional, integrated
micro and nanoelectromechanical devices. This year’s session will cover
areas that are thematically related to the materials processing and
characterization, fabrication approaches, surface and interface sciences of
MEMS and NEMS, and integration and packaging strategies of MEMS and NEMS.
Applications of MEMS and NEMS devices in resonant sensing of chemical and
biological immunospecific binding events, study of parametric dynamical
phenomenon of coupled oscillator systems, electronics and dissipation
mechanisms are also addressed.
MEMS and NEMS will host three
primary oral sessions and one poster session followed by various joint
sessions. The program opens with an invited talk by S. Pacheco with the
emphasis on the challenges of materials processing, characterization and
novel approaches to the fabrication of RF-MEMS resonators followed by
contributed presentations discussing recent progress in the development of
RF-MEMS resonators based on various candidate materials such as AlN, diamond
and carbon nanotube including studies on dissipation mechanism in
resonators. Apart from these, some interesting studies on the
characterization of material transfer during nanoscale switching action will
also be addressed. The same session also features two invited talks by P.
McEuen and A. Edelstein discussing issues in MEMS processing and fabrication
of MEMS magnetometer respectively. The highlight of the second session will
be an invited talk by Amit Lal on the challenges of Integration and
Packaging in MEMS/NEMS. Contributing presentations discussing latest
developments of the unique dynamics that underpin these widely disparate
integration and packaging endeavors include integration of diamond with CMOS,
fluidic and optically interrogated mechanical structures. These efforts are
crucial and open new avenues for observing, probing and controlling micro
and nanoscale structures with sufficient regularity and precision. The
poster session includes general materials and device aspects of MEMS and
NEMS.
Joint session with tribology
program (TR) focused on the impact of surfaces and interfaces on MEMS and
NEMS device characteristics. The session is highlighted with invited talks
by Jackie Krim and Roya Maboudian. In this session, the invited lectures
discuss operation of MEMS and NEMS in harsh environments including low
pressures, high and cryogenic temperatures, and high relative humidity con-ditions.
Tribological issues and possible solutions for operation of MEMS in such
extreme environments are also discussed. These effects are critical to
progress in the development of functional MEMS and NEMS based sensors and
actuators.
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Division Sponsors |
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INPHOT, INC.
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CODE |
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SESSION |
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MN-MoM |
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Materials Processing, Characterization and Fabrication Aspects
S.P. Pacheco, Freescale Semiconductor, Inc. |
MN-MoA
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Materials Processing, Characterization & Fab Aspects
A.S. Edelstein, U.S. Army Research Lab. P.L. McEuen, Cornell
University |
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MN-TuM |
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Integration and Packaging in MEMS/NEMS A. Lal, DARPA |
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MN-TuP |
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MEMS and NEMS Poster Session |
Nanometer-Scale
Science and Technology
The Nanometer-scale
Science and Technology Division Program for 2007 covers recent advances in
nanoimaging, nanotribology, nanoassembly, nanolithography, nanotechnology,
nanotubes, and nanowires. Applications of nanostructures and devices in
electronics, photonics, sensing, and nanobiotechnology are also addressed. A
major focus in nanoscale science and technology is high-resolution imaging
and high sensitivity detection using scanning probes. We have invited an
excellent group of experts as invited speakers (listed below) to highlight
the related activities in 10 of the Nanometer-scale Science and Technology
Oral sessions.
The division also co-sponsors a
special program in Nanotribology and Nanomechanics with 2 outstanding
invited speakers. Our activities also cross over other AVS divisions and we
have joint programs within Nanoelectronic and Nanophotonic Devices,
Fabrication and Characterization of Functional Soft Material Surfaces,
Surface Analysis for Biological Materials, Understanding Surface
Functionalized Nanoscale Materials, Nano-Engineering of Biointerfaces, and
Plasmas in Nanotechnology. The Nanometer-scale Science and Technology
Division is also pleased to host the 2007 AVS Albert Nerken Award winner,
Rich Colton from Naval Research Laboratory, who will lecture on Surface
Analysis and Nanotechnology: A Personal Odyssey.
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CODE |
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SESSION |
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NS-MoM |
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Nanoscale Assembly and Manipulation I
H. Wolf, IBM Research GmbH, Zurich Research Laboratory,
Switzerland |
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NS-MoA |
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Nanoscale
Assembly and Manipulation II
M.L. Culpepper, MIT |
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NS-TuM |
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Imaging of
Nanostructures
D.S. Ginger, University of Washington
R.F. Klie, University of Illinois - Chicago |
NS+MS-TuA
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Characterization of Nanostructures
N.P. Economou, Carl Zeiss SMT
S. Hasegawa, University of Tokyo, Japan |
NS-TuP
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Nanometer-scale Science and Technology Poster Session I |
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NS+EM-WeM |
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Nanoscale
Devices and Nanowires I
D.K. Ferry, Arizona State University
F.M. Ross, IBM T. J. Watson Research Center |
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NS1+BI-WeA |
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Biological
and Molecular Applications of Nanoscale Structures
V. Vogel, ETH Zürich, Switzerland |
NS2+EM-WeA
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Nanoscale
Devices and Nanowires II
A. Fujimoto, Toshiba Corporation, Japan |
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NS-ThM |
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Nanotube Devices and Processes |
NS-ThA
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Nanoscale
Sensors
R.J. Colton, Naval Research Laboratory* M. Hegner, CRANN,
Univ. of Dublin, Ireland |
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NS-ThP |
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Nanometer-Scale Science & Techology Poster Session II |
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NS-FrM |
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Nanolithography and Nanoprocess Technology
J. Brugger, Swiss Federal Institute of Technology (EPFL),
Switzerland M.Y. Simmons, U. of New South Wales, Australia |
Plasma Science and
Technology
The Plasma Science and
Technology area will highlight a spectrum of recent and exciting advances in
plasma research, ranging from semiconductor related processing to bioscience
and nanotechnology applications, from diagnostics for studying gas phase and
surfaces to novel plasma sources. The complete program includes sixteen oral
sessions and two posters sessions covering semiconductor, low-k and high-k
dielectric etching, plasmas for applications in nanoscience and
nanotechnology, plasma deposition, plasma-wall interactions, plasma sources,
plasma diagnostics, and plasma-surface interactions in etching and
deposition. An overall program highlight is the Tuesday morning session on
plasma enhanced atomic-layer deposition (PEALD) and plasma enhanced chemical
vapor deposition (PECVD). This joint session with the Thin Film Division
will feature three invited speakers, including the 2007 Peter Mark Award
recipient, Professor Erwin Kessels, and Professors Jeon and Massines who
will talk about PEALD, PECVD of high-k dielectrics and atmospheric pressure
plasma deposition of silicon, respectively.
The Plasma Science and
Technology Program begins on Monday morning with two sessions on advanced
interconnect etching and plasma modeling. A highlight of the morning
sessions is the invited presentation by Professor T. Makabe of the Keio
University, who received the Plasma Science and Technology Division Plasma
Prize in 2006. Following the theme of Prof. Makabe’s research of modeling at
multiple length and time scales, several presentations will focus on plasma
gas phase modeling and profile simulations. The Advanced Interconnect
Etching Session is co-sponsored by the Manufacturing Science and Technology
Division and will feature two invited talks by Dr. Nozawa and Professor
Neureuther who will present on challenges in low-k dielectric etching and on
design-process integration.
Monday afternoon’s stand-alone
session will begin with the John A. Thornton Memorial Award Lecture; this
year's recipient, Professor Steve Pearton, will talk about etching wide-band
gap semiconductors such as SiC and ZnO. The papers following will
concentrate on etching III-V semiconductors, high-k dielectrics and other
materials that are encountered in novel devices and gates.
The program for Tuesday starts
with two parallel oral sessions. The first session is on gate etching where
Th. Lill will present an invited talk on integration challenges in gate
patterning. The session provides a snapshot of the state of the art and
issues related to patterning sub-45 nm gates. This session is in parallel
with the session on plasma enhanced atomic-layer deposition (PEALD) and
plasma enhanced chemical vapor deposition (PECVD).
The second of two sessions on
advanced interconnect etching is on Tuesday afternoon in parallel with a
session that will concentrate on plasma sources where Pascal Chabert will
deliver an invited talk on fundamentals of electron heating mechanism and
mode transitions in dual-frequency plasma sources.
Wednesday will open with a
jointly sponsored session (with the Nanometer-Scale Science and Technology
Division) on the growing area of plasma applications in nanotechnology. The
highlight of the plasma deposition session will be Professor Hatakeyama’s
invited presentation on synthesis of carbon nanotubes through ionic plasmas.
The first of the three plasma-surface interactions sessions is also on
Wednesday morning. This first session will focus on fundamentals of
plasma-surface interactions with emphasis on ion-surface interactions and
UV-VUV damage. The highlight of this session is an invited talk by Professor
M. Gordon who will talk about interactions of F-containing ions with
semiconductor, dielectric and metal surfaces.
One of the two parallel sessions
on Wednesday afternoon will focus on plasma-wall interactions. Dr. Singh of
Lam Research will present an invited talk on diagnostics designed to
elucidate plasma-wall interactions during etching and chamber cleaning. The
second session is on plasmas and polymers and includes papers ranging from
plasma-photoresist interactions to plasma deposition and etching of polymer
films. Dr. Erwine Pargon will give an invited talk in this session on the
impact of plasma etching process on 193 nm photoresist.
The first of two sessions on
plasma diagnostics will start the day on Thursday in parallel with a second
session on plasma-surface interactions. The highlight of the session on
plasma diagnostics is an invited talk by Dr. J. Benedikt on measurements of
the absolute density of growth precursors in plasma deposition through mass
spectrometry. The session on plasma-surface interactions also includes
papers on ion-surface interactions and their quantification for use in
profile simulations. Dr. M. Sobolewski of the National Institute of
Standards and Technology will give an invited talk on noninvasive monitoring
of ion current and energy during plasma processing.
The joint session between PSTD
and Biomaterial Interfaces Division on plasmas in bioscience will be on
Thursday afternoon in parallel with the second session on plasma
diagnostics. Dr. I. Yamashita of the Matshushita Electric Industrial will
give an invited talk on a new approach to nano-fabrication of functional
structures in the joint session with the Biomaterial Interfaces Division. T.
Gans will conclude the day with an invited talk on process control through
diagnostics in multifrequency discharges and atmospheric plasmas. Do not buy
your plane tickets until Friday afternoon because the third session on
plasma-surface interactions on Friday morning has papers from leading
groups, including contributions from Professors Graves, Kushner, Oehrlein,
and Sawin. This session will concentrate on the very important issue of
plasma-surface interactions relevant to degradation and roughening of
photoresist below the 0.45 nm node, a potential show stopper.
|
CODE |
|
SESSION |
|
PS1-MoM |
|
Plasma Modeling
T. Makabe, Keio University, Japan |
|
PS2-MoM |
|
Plasma Etching for Advanced
Interconnects I A. Neureuther, Univ., of California, Berkeley T.
Nozawa, Tokyo Electron LTD Japan |
PS-MoA
|
|
Processing for High k, III-V
and Smart Materials
S.J. Pearton, University of Florida* |
|
PS1+TF-TuM
|
|
Plasma Enhanced Atomic Layer
Deposition and Plasma Deposition
H. Jeon, Hanyang University, South Korea W.M.M. Kessels, Eindhoven
University of Technology, The Netherlands* F. Massines, CNRS PROMES, France |
PS2-TuM
|
|
Advanced Gate Etch
Th. Lill, Applied Materials, Inc. |
|
PS1-TuA |
|
Plasma Etching for Advanced
Interconnects II |
|
PS2-TuA |
|
Plasma Sources
P. Chabert, École Polytechnique, France |
|
PS-TuP |
|
Plasma Science and Technology
Poster Session |
|
PS1+NS-WeM |
|
Plasmas in
Nanotechnology
R. Hatakeyama, Tohoku University, Japan |
|
PS2-WeM |
|
Plasma-Surface Interactions I
M.J. Gordon, California Inst. of Technology |
|
PS1-WeA |
|
Plasma-Wall Interactions
H. Singh, Lam Research Corporation |
|
PS2-WeA |
|
Plasmas and Polymers
E. Pargon, CNRS, France |
PS1-ThM
|
|
Plasma-Surface Interactions
II
J. Benedikt, Ruhr-Univ. Bochum, Germany |
|
PS2-ThM |
|
Plasma Diagnostics I
M.A. Sobolewski, NIST |
PS1-ThA
|
|
Plasma Diagnostics II
T. Gans, Queen’s University Belfast, UK |
|
PS2+BI-ThA |
|
Plasmas in Bioscience
I. Yamashita, Matsuhita Electric Industrial Co. Ltd. Japan |
PS-ThP
|
|
Plasma
Science and Technology Poster Session |
|
PS-FrM |
|
Plasma-Surface Interactions
III |
Surface Science
The Surface Science
program encompasses fundamental research, new techniques, and forefront
analytical studies involving solid surfaces and interfaces. This
interdisciplinary research area includes the development and application of
state-of-the-art experimental or theoretical techniques to elucidate
scientific concepts underpinning chemical and physical phenomena at surfaces
or interfaces. This understanding provides the foundation for studies of
technologically relevant materials.
This year’s program includes
sessions addressing such fundamental surface science topics as: (i)
catalysis on clusters and nanoparticles, (ii) surface structure, growth and
etching of Si and Ge, (iii) water at solid surfaces, (iv) electronic and
vibrational structure of surfaces, (v) catalytic chemistry of hydrocarbons,
(vi) surface structure and growth on metals, (vii) bimetallics and alloys,
(viii) excitations at surfaces, (ix) oxide surface reactivity, (x) SAMs and
organic films (co-sponsored with EMPD and TFD), (xi) reactions on metal
surfaces, (xii) oxide surface structure, (xiii) surface structure of
compound semiconductors (co-sponsored with EMPD), (xiv) environmental
surfaces (co-sponsored with ASSD), (xv) organic and carbon films on Si
(co-sponsored with EMPD and TFD), and (xvi) surface dynamics. Additionally,
the Surface Science Division has two sessions included in the Industrial
Physics Forum 2007: The Energy Challenge titled “Catalysis for hydrogen
storage and the hydrogen economy” and “Surface science challenges for solar
energy conversion” (co-sponsored with TFD). Finally, the traditional Surface
Science Post-Deadline Discovery Session will be held on Thursday evening, at
which time the Morton S. Traum Award Winner will be announced.
|
CODE |
|
SESSION |
SS1-MoM
|
|
Catalysis on Clusters and
Nanoparticles
M. Bowker, Cardiff University, UK |
SS2-MoM
|
|
Structure, Growth, and
Etching of Silicon and Germanium |
SS1-MoA
|
|
Water-Surface Interactions
G. Held, University of Reading, UK |
|
SS2-MoA |
|
Electronic and Vibrational
Structure
H. Ueba, The University of Toyama, Japan |
|
SS1-TuM |
|
Catalytic Chemistry of
Hydrocarbons
M. Mavrikakis, Univ. of Wisconsin, Madison |
|
SS2-TuM |
|
Surface Structure and Growth
on Metals
H.H. Weitering, University of Tennessee |
|
SS1-TuA |
|
Bimetallics and Alloys
J.G. Chen, University of Delaware |
|
SS2-TuA |
|
Excitations
at Surfaces
L. Sanche, Univ. of Sherbrooke, Canada |
|
SS-TuP |
|
Surface
Science Poster Session |
EN+SS+TF-WeM
|
|
Catalysis for Hydrogen
Storage and the Hydrogen Economy
L. Schmidt, University of Minnesota |
SS1-WeM
|
|
Oxide Surface Reactivity
F.P. Netzer, Karl-Franzens U. Graz, Austria |
|
SS2+EM+TF-WeM |
|
SAMs and Organic Films I |
|
SS1-WeA |
|
Reactions on
Metal Surfaces
T. Matsushima, Hokkaido University, Japan |
|
SS2-WeA |
|
Oxide Surface Structure
I M. Reichling, Universität Osnabrück, Germany |
EN+TF+SS-WeA
|
|
Photovoltaics, Fuel Cells,
and Alternative Energy Materials and Applications
Y. Yang, University of California, Los Angeles |
|
SS1-ThM |
|
Oxide Surface Structure II
S.A. Chambers, Pacific Northwest Natl Lab. |
|
SS2-ThM |
|
Surface Structure of Compound
Semiconductors
V.M. Bermudez, Naval Research Laboratory |
|
EN+SS+TF-ThM |
|
Surface Science Challenges
for Solar Energy Conversion
N.S. Lewis, California Institute of Technology |
|
SS1-ThA |
|
Environmental Surfaces
H. Fairbrother, Johns Hopkins University |
|
SS2+EM+TF-ThA |
|
Organics and Carbon Films on
Silicon
J.M. Buriak, University of Alberta, Canada |
|
SS-ThP |
|
Surface Science Poster Session |
|
SS1-FrM |
|
Surface Dynamics
J.I. Pascual, Freie Universität Berlin, Germany |
|
SS2+EM+TF-FrM |
|
Organic Films II:
Semiconductors and C60
G.-Y. Liu, University of California, Davis |
Thin Film
This year’s Thin Film
Division Program will highlight the growing field of Atomic Layer Deposition
(ALD) with 4 full sessions (including a joint session with Plasma Science)
focusing on applications, emerging topics, surface chemistry and plasma ALD.
The ALD and Applications Session will include invited lectures by W.L.
Gladfelter (University of Minnisota) highlighting a combinatorial ALD
process and K.K Gleason elaborating on a conformal polymer ALD process. The
Emerging Topics in ALD Session will be highlighted by an invited lecture by
M. Knez (Max-Planck-Institute of Microstructure Physics, Germany) that will
discuss how ALD is making in-roads to nano(Bio)technology. In the third
session entitled Surface Chemistry for Atomic Layer Deposition, J.F. Sanz
(Universidad de Sevilla, Spain) will present an invited lecture on
Simulations of the Surface Chemistry of HfO2 ALD. Finally, there will be a
joint session with the Plasma Science Division on Plasma ALD featuring
invited talks from H. Jeon (Hanyang University, South Korea) and the Peter
Mark Memorial Award Lecture by W.M.M. Kessels (Eindhoven University of
Technology, The Netherlands). Contributed papers will cover broad areas of
oxide and metallic thin films, low-k materials, controlled doping, ALD
device fabrication, and novel polymer growth.
The Photovoltaics, Fuel Cells,
and Alternative Energy Materials and Applications will have two sessions on
a variety of materials and devices and thin film synthesis techniques for
advanced energy applications. An invited lecture by Y. Yang (University of
California, Los Angeles) will discuss the Plastic Bulk-Heterojunction Solar
Cells and Near-Infrared Photodetectors.
The Growth, Characterization,
and Modeling of Thin Films sessions will be highlighted by invited lectures
by J.G. Amar (University of Toledo) on the Effects of Steering and Shadowing
in Epitaxial Growth, T. Karabacak (University of Arkansas at Little Rock)
discussing the Growth dynamics of nanostructures and thin films, Susan
Sinnott (University of Florida) in the Computational Aspects of Thin Films
session, and Q. Li (Penn State) overviewing his recent work on MgB2
superconductive thin films. True to the session name, contributed papers
will cover a broad gamut of topics covering the growth, characterization,
and modeling of thin films.
The Thin Films for Displays and
Flexible Electronics session covers a variety of topics including
transparent transistors and conducting oxides, to some photonic crystal
devices and permeation layers. The session is highlighted by and invited
talk by D.C. Paine (Brown University) who will discuss the Fabrication and
Characterization of Indium Zinc Oxide-Based Thin Film Transistors. The
Carbon Nanomaterials Session will have a focus on two-dimensional carbon
nanostructures including an invited talk by Walt de Heer (Georgia Tech) on
graphene FETs. The Thin Films Poster Sessions held on Tuesday and Thursday
evenings will present a diverse range of topics covering thin film growth
fundamentals and techniques, characterization and analysis, and device
applications.
In addition to these sessions,
the Thin Film Division also co-sponsors the following sessions
(co-sponsoring division): Nano-Manufacturing of Materials (Nanomanufacturing),
Plasma Enhanced Atomic Layer Deposition and Plasma Deposition (Plasma
Science), Surface Science Challenges for Solar Energy Conversion (Surface
Science), and Organic Film Growth (Surface Science).
|
CODE |
|
SESSION |
|
TF-MoM |
|
Atomic Layer
Deposition and Applications
W.L. Gladfelter, University of Minnesota K.K. Gleason,
MIT |
|
TF-MoA |
|
Emerging Topics in Atomic
Layer Deposition
M. Knez, Max-Planck-Institute of Microstructure Physics, Germany |
|
TF-TuM |
|
Two-Dimensional Carbon
Nanostructures
W.A. de Heer, Georgia Inst. of Technology |
TF-TuA
|
|
Surface Chemistry for Atomic
Layer Deposition
C.B. Musgrave, Stanford University |
|
TF-TuP |
|
Aspects of
Thin Films Poster Session |
|
TF-WeM |
|
Thin Film and Nanoparticle
Growth and Characterization
R.E. Palmer, The Univ. of Birmingham, UK |
EN+SS+TF-WeM
|
|
Catalysis for Hydrogen
Storage and the Hydrogen Economy
L. Schmidt, University of Minnesota |
|
EN+TF+SS-WeA |
|
Photovoltaics, Fuel Cells,
and Alternative Energy Materials and Applications
Y. Yang, Univ. of California, Los Angeles |
|
TF-WeA |
|
Oblique Angle Deposition
J.G. Amar, University of Toledo T. Karabacak, U. of Arkansas at Little Rock |
|
EN+SS+TF-ThM |
|
Surface Science Challenges
for Solar Energy Conversion
N.S. Lewis, California Inst. of Technology |
|
TF-ThM |
|
Thin Films for Electronic
Applications
Q. Li, Pennsylvania State University |
|
TF1-ThA |
|
Photovoltaics,
Fuel Cells, and Alternative Energy Materials and Applications |
|
T2-ThA |
|
Computational Aspects of Thin
Films
S.B. Sinnott, University of Florida |
|
TF-ThP
|
|
Aspects of Thin Films Poster
Session |
|
TF-FrM |
|
Thin Films for Displays and
Flexible Electronics
D.C. Paine, Brown University |
|
TF2-FrM |
|
Nanoparticles
M.G. White,
Brookhaven National Lab. |
Vacuum Technology
The 2007 Vacuum Technology Division Program offers traditional and new
topics. Our session on large vacuum systems spans the gamut from space
simulation to industrial need to understand vacuum gas dynamics for system
design. We discuss the need for miniature and portable vacuum systems for
terrestrial and space applications in session VT WeA. Miniaturization and
portability requirements are driven by industrial and homeland security
considerations. Our VT ThM session addresses pumping, pressure measurement
and calibration topics. VT ThA explores exciting developments in outgassing
phenomena as well as large vacuum systems, including space simulation. Our
poster session Thursday at 5:30 p.m. includes a number of student posters
which are in competition for a $500 cash prize. We will again hold our Ask
The Experts event, where we offer the expertise of vacuum technologists to
answer questions about all aspects of vacuum technology, in the exhibit
area. All attendees are welcome to ask any vacuum questions, from basic
principles to processing questions. ATE will be open all the hours of the
exhibit.
|
CODE |
|
SESSION |
|
VT-WeA |
|
Miniature, Portable and Space Vacuum Applications
R.J. Kline-Schoder, Creare Incorporated
S. Semancik, NIST
P.W. Valek, Southwest Research Institute |
|
VT-ThM |
|
Pumping, Pressure Measurement and Calibration
A.D. Chew, BOC Edwards, UK |
|
VT1-ThA |
|
Adsorption/Desorption Phenomena on Vacuum Materials
M. Leisch, Graz Univ. of Technology, Austria
|
VT2-ThA
|
|
Large Vacuum Systems
F.G. Collins, The U. of Tennessee Space Institute |
VT-ThP
|
|
Vacuum Technology Poster Session |
TOPICAL
CONFERENCES/SPECIAL SESSIONS
American Institute
of Physics Industrial Physics Forum 2007 (IPF): The
Energy Challenge
The Corporate Associates of the American Institute of Physics (AIP) host the
Industrial Physics Forum (IPF)—a multifaceted science meeting that presents
industrial, academic and governmental views and addresses significant issues
in physics and related fields. The IPF brings together industry executives,
academics, research managers, and science policy decision makers for
discussions and up-to-date assessments of the current research and policy
developments that affect the physical sciences community. The IPF fosters
the sharing of knowledge, collaboration, and enables the exchange of ideas
with other R&D leaders who face similar research and business challenges.
This is the second consecutive IPF held in conjunction with the AVS
International Symposium. This unique gathering affords participating attendees
an experience of information exchange in focused areas and fields complimentary
to AVS’s diverse science and te |