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Deadlines |
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Housing:
September 18,
2007 |
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Symposium:
September 24,
2007 |
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The AVS
Awards Assembly will be held on Wednesday, October 17, 2007 at 6:15 p.m. in Room
6C of the Washington State Convention Center to be followed immediately by an
Awards Reception in Room 6E. This year, AVS honors the following awardees:
Major Awards & Recipients
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The Medard W. Welch Award
was established in 1969 to commemorate the pioneering efforts of M.W.
Welch in founding and supporting AVS. It is presented to recognize and
encourage outstanding research in the fields of interest to AVS. The
award consists of a cash award, a struck gold medal, a certificate, and
an honorary lectureship at a regular session of the International
Symposium.
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Dr.
Jerry Tersoff, IBM T.J. Watson Research Center, “for seminal theoretical
contributions to the understanding of surfaces, interfaces, thin films
and nanostructures of electronic materials.”
Jerry Tersoff is a Research
Staff Member at the IBM Thomas J. Watson Research Center. His work spans
diverse topics in the theoretical understanding of surfaces, interfaces,
electronic materials, epitaxial growth, and nanoscale devices.
Throughout his career, his work has emphasized the use of simple models
to understand complex behavior.
After studying physics at Swarthmore
College (B.A. 1977) and University of California, Berkeley (Ph.D. 1982),
he did postdoctoral work at Bell Laboratories before joining IBM in
1984. Through the mid-1980s he focused on two
quite different problems. One was how to interpret images generated by
the new experimental technique of scanning tunneling microscopy (STM).
Together with Donald R. Hamann, he showed that the images could be
interpreted in terms of surface electronic structure and topo-graphy,
without reference to the complex tunneling problem. Despite (or because
of) its simplicity, this model is still the practical basis for
interpretation of STM images.
The other problem was the Schottky barrier
at interfaces between metals and semiconductors, and closely related,
the barrier to electron or hole transport at a semiconductor hetero-
junction. At the time, these problems were widely believed to be
unrelated, controlled by quite different mechanisms. But a single simple
model proved sufficient to make quantitative estimates of barriers for
both types of systems, in the process showing that the two phenomena
were closely related to each other and to the intrinsic dielectric
response.
He then turned to constructing simple classical models for the
interactions of atoms in covalent materials such as Si, for use in
large-scale simulations. A new approach enabled treatment of Si, Ge, C,
and their compounds and alloys. These potentials are widely used.
In the
early 1990s, the inspiring work of experimental colleagues at IBM and
elsewhere drew him to study epitaxial crystal growth. In heteroepitaxy,
misfit stress can drive rippling, step bunching, island formation, and
self- organization of a variety of potentially useful nanostructures.
Working with many experimental and theoretical collaborators, Tersoff
has been deeply involved in the development of this field.
The
development in 1998 of carbon nanotube transistors drew him back to
electronic properties and Schottky barriers. With collaborators at IBM,
he showed that these quasi-1D devices are quite different than
conventional transistors, developing a comprehensive picture of their
Schottky barrier switching mechanism, device characteristics, and
scaling.
Tersoff’s work has been previously recognized by the AVS Peter
Mark Memorial Award (1988), the MRS Medal of the Materials Research
Society (1996), and the Davisson- Germer Prize of the American Physical
Society (1997). He has served on the Executive Committee of the AVS
Surface Science Division (1996-1998), the Editorial Board of Journal of
Applied Physics and Applied Physics Letters (2001-2003), and the Board
of Directors of the Materials Research Society (2003-2005). His
published work has been cited over 17,000 times, including 14 papers
that are cited over 400 times each (12 as first or sole author). He is a
member of AVS and Materials Research Society, and a Fellow of the
American Physical Society. |
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The
Albert Nerken Award was established in 1984 by Veeco Instruments, Inc.
in recognition of its founder, Albert Nerken, a founding member of AVS,
and his early work in the field of high vacuum and leak detection, and
contributions to the commercial development of that instrumentation. It
is presented to recognize outstanding contributions to the solution of
technological problems in areas of interest to AVS. The award consists
of a cash award and a certificate.
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Dr.
Richard J. Colton,
Naval Research Laboratory, “for seminal scientific insights that accelerated
the development of vastly improved surface and nanoscale analytical techniques,
and of innovative biomolecular sensors.”
Richard J. Colton holds two senior positions at the Naval Research
Laboratory (NRL). As the Director of the Institute of Nanoscience, he
coordinates and manages highly innovative, interdisciplinary research programs
and facilities that operate at the intersections of the fields of materials,
electronics and biology in the nanometer size domain. The facilities were
designed to exploit and complement the broad multidisciplinary character of the
NRL in order to bring together scientists with disparate training and
backgrounds to attack common goals at the intersection of their respective
fields at this length scale. He is also Acting Superintendent of the Chemistry
Division which conducts basic and applied research in the following areas:
chemical dynamics and diagnostics, materials chemistry, corrosion science and
engineering, surface chemistry, and safety and survivability.
Dr. Colton earned B.S. and Ph.D. degrees from the University of
Pittsburgh in 1972 and 1976, respectively, where he performed graduate work in
the areas of ultraviolet and X-ray photoelectron spectroscopy. In 1976, he
became a National Research Council Resident Research Associate at NRL working on
secondary ion mass spectrometry. Dr. Colton joined the NRL Chemistry Division in
1977 as a research chemist working in surface chemistry. From 1982 to 1998 he
was Head of the Advanced Surface Spectroscopy Section in the Surface Chemistry
Branch, where he directed and obtained funding for R&D programs to characterize
materials by electron and ion spectroscopies, determine the atomic and molecular
structure of surfaces by scanning tunneling microscopy, develop new method to
measure nanoscale adhesion, friction and mechanical properties of surfaces by
atomic force microscopy, and develop novel physical, chemical and biological
sensors using electron tunneling and molecular recognition. In 1986, while on
sabbatical as a Visiting Associate at the California Institute of Technology, he
built a scanning tunneling microscope and used it to understand the
atomically–resolved imaging mechanism of graphite in air. In 1998, he became
Head of the Surface Chemistry Branch, where he directed a highly
interdisciplinary research program in surface chemistry and physics. The staff
of ~70 people includes government employees, postdocs, contractors, visiting
faculty, and students—the majority hold PhD degrees in chemistry, physics,
materials science, or engineering. Major research topics include surface
science, nanoscience and technology, nanostructured and electronic materials,
chemical dynamics, tribology and coatings, and chemical/ biological sensors. In
2005, he became the Director of the Institute for Nanoscience. As Director, he
manages laboratory R&D funds totaling $11M and nanofabrication facilities used
for nanoscience research. In late 2006, he became the Acting Superintendent of
the Chemistry Division.
Dr. Colton has published over 130 technical papers, including ten book
chapters and five patents, which have been cited in the literature over 6000
times. He is a member of AVS, American Chemical Society, American Physical
Society, Sigma Xi, and Materials Research Society. He was the first chairman of
the AVS Division on Nanometer-scale Science and Technology in 1993, former chair
of the AVS Applied Surface Science Division, and served on the AVS Board of
Directors in 1992-93. He received the 1992 Hillebrand Prize awarded by the
Chemical Society of Washington, was elected AVS Fellow in 1995, received the NRL-Edison
Chapter of Sigma Xi Applied Research Award in 1999, and won numerous technical
publication and technology transfer awards including the Federal Laboratory
Consortium Award for Excellence in Technology Transfer in 2001. Dr. Colton also
received the Navy Meritorious Civilian Service Award in 2003.
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The John A. Thornton Memorial Award and Lecture was established in
1989 as a memorial to Dr. John A. Thornton for his devotion to science,
his singular contributions to the generation and study of thin films,
his effectiveness as an educator, and his unfailing humility, which won
him the uncommon esteem and affections of his colleagues. It is
presented to recognize outstanding research or technological innovation
in the areas of interest to AVS, with emphasis on the fields of thin
films, plasma processing, and related topics. The award is conferred
biennially. It consists of a cash award, a commemorative plaque stating
the nature of the award, and an honorary lectureship at a regular
session of the International Symposium.
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Dr.
Stephen J. Pearton,
University of Florida, “for pioneering the science and application of
advanced device fabrication techniques, including plasma etching, ion
implantation for doping and electrical isolation, and formation of Ohmic and
Schottky contacts for compound semiconductors.”
Stephen J. Pearton is Distinguished Professor and Alumni Chair in the
Department of Materials Science and Engineering at the University of
Florida. Prior to joining UF in 1994 he was a Member of Technical Staff at
AT&T Bell Lab-oratories in Murray Hill, NJ for 10 years where he was
responsible for developing new process and fabrication methods for compound
semiconductor devices used on data transmission systems.
He completed his B.S.in Physics at the University of Tasmania in
Australia in 1978 and carried out his Ph.D research at the Australian Atomic
Energy Commission under a scholarship from the Australian Institute of
Nuclear Science and Engineering. He was a postdoctoral researcher at the
University of California, Berkeley and Lawrence Berkeley Lab from 1982-1983.
He is a Fellow of AVS, the American Physical Society(APS), The
Electrochemical Society(ECS), the Institute of Electrical and Electronics
Engineers (IEEE) and The Minerals, Metals and Materials Society(TMS). He is
author of 1300 journal articles on electronic materials, physics of
semiconductors, hydrogen in solids and device processing, 34 book chapters,
12 books,12 patents and has received over 23,000 citations in professional
journals. He has served as editor of Solid State Electronics,
associate editor of both JVST A and B and is on the editorial board
of Applied Physics Letters, Journal of Applied Physics, Applied Physics
Reviews, Materials Today, Materials Science and Engineering Reports.
His work encompasses a broad, multidisciplinary approach, borrowing from
physics, chemistry, electrical, chemical and materials science and
engineering to understand the effects of processing techniques on the
performance of advanced compound semiconductor devices. These contributions
have been critical to the commercialization of these devices in cell phones,
wireless communication systems, collision-avoidance radar, high density DVDs
and traffic lights and other displays. Many of the companies manufacturing
these products use fabrication processes that are based on results initially
developed by Pearton. His current work focuses on development of novel
sensors, transparent thin film electronics and visible and UV laser and
light-emitting diodes. He has presented more then 250 invited talks at
national or international scientific conferences and won the ECS Electronics
Division Award in 2005. He is married to Cammy Abernathy (also an AVS
Fellow) and has an 8 year old son, Max, who is a great fan of the Florida
Gators in all sports. |
Peter Mark Memorial Award
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The
Peter Mark Memorial Award was established in 1979 in memory of Dr. Peter
Mark who served as Editor of the Journal of Vacuum Science and
Technology from 1975 to 1979. The award is presented to a young
scientist or engineer (35 years of age or under) for outstanding
theoretical or experimental work, at least some of which must have been
published in JVST. The award consists of a cash award, a certificate,
and an honorary lectureship at a regular session of the International
Symposium.
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Dr.
W.M.M. Kessels, Eindhoven University of Technology, “for pioneering work
in the application and development of in situ plasma and surface
diagnostics to achieve a molecular understanding of thin film growth.”
W.M.M. Kessels (Erwin)
currently holds a tenured Assistant Professorship in the Department of
Applied Physics at Eindhoven University of Technology in the
Netherlands. His work explores the synthesis of thin films,
nanostructures, and devices using methods such as plasma-enhanced
chemical vapor deposition, atomic layer deposition, and plasma etching.
His research focuses particularly on the development of processes for
thin-film manufacturing in collaboration with several industrial
partners and it incorporates numerous applications such as
microelectronics, photovoltaics, energy storage, photonics, and flexible
electronics. In addition, a large part of the research is devoted to
investigations of the plasma-surface interactions and thin film growth
mechanisms. His research group develops and implements advanced surface-
sensitive diagnostics - mostly based on linear and nonlinear optics -
that can be applied in real time during film growth. The central theme
within the work is to improve the understanding of the underlying
reaction mechanisms in order to better control the chemical and physical
processes such that the desired properties of thin films, processes, and
devices can be designed to order.
In recent years, Erwin’s
research interest in atomic layer deposition (ALD) has expanded. He
focuses on plasma-assisted ALD processes to fully exploit the
opportunities delivered by the process and to address its current
challenges. He is active in both ALD tool and related hardware
development and in the utilization of the technique in less traditional,
non-semiconductor applications to establish the benefits of the
plasma-based process for these types of applications.
Erwin received his M.S. and
Ph.D. degrees (cum laude) in Applied Physics from the Eindhoven
University of Technology in 1996 and 2000, respectively. His doctoral
work, which was partly carried out at the University of California Santa
Barbara, investigated the plasma deposition process of amorphous
silicon. During his postdoctoral research Erwin investigated
plasma-surface interactions at the Colorado State University and
nonlinear surface spectroscopy at the Philipps University, Marburg
(Germany). In 1999 he was the recipient of the Coburn and Winters
Student Award of the AVS Plasma Science and Technology Division. In
2002, he was awarded a fellowship by the Royal Netherlands Academy of
Arts and Sciences. In 2005, he spent a sabbatical leave at the
University of California Berkeley.
Erwin has authored and
co-authored over 80 papers in peer-reviewed journals and is co-inventor
of several patents. He is an active member of the AVS, ECS, and MRS and
serves on several international conference committees. Within AVS, he
has served on the Executive Committee of the Plasma Science and
Technology Division (2004-2007) and he will be chairing the 8th
International Conference on Atomic Layer Deposition in 2008 as sponsored
by the Thin Film Division. |
MAJOR Symposium Sponsors
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