| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014) | |
| Thin Films | Wednesday Sessions |
| Session TF-WeP |
| Session: | Thin Films Poster Session |
| Presenter: | Jinsu Lee, Sungkyunkwan University, Republic of Korea |
| Authors: | S.-H. Nam, Sungkyunkwan University, Republic of Korea K.-H. Hwang, Sungkyunkwan University, Republic of Korea J.H. Yu, Sungkyunkwan University, Republic of Korea J.S. Lee, Sungkyunkwan University, Republic of Korea J.-H. Boo, Sungkyunkwan University, Republic of Korea |
| Correspondent: | Click to Email |
Silicon carbide thin films were deposited on Si(100) substrates by metal-organic chemical vapor deposition(MOCVD) in high vacuum condition at 2.0 × 10-7 Torr using 1,3-disilabutane as a single source precursor which contains silicon and carbide in 1:1 ratio at various temperature in the range of 700 ~ 1000 oC. The XPS result shows that the SiC thin film grown at 950 oC which have carbon rich for silicon and carbon at 1:1.2 ratio. XRD result shows that the SiC thin film grown at 900 oC which appeared at 2 = 41.6o for SiC (200) reflection at a large intensity and a single shape diffraction peck. SEM images result show that the SiC thin film grown at 900 oC which has influence on the small grain size and single crystallinity. AFM images result show that the SiC thin film has smooth surface at RMS = 20nm. In this paper, we fabricated the small aperture for the better performance such as less noise, higher resonant frequencies and fast imaging. We will apply that silicon carbide thin film has smooth surface on NSOM application.