| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014) | |
| Thin Films | Wednesday Sessions |
| Session TF-WeP |
| Session: | Thin Films Poster Session |
| Presenter: | Yong-Yeon Kim, Sunchon National University, Republic of Korea |
| Authors: | Y.Y. Kim, Sunchon National University, Republic of Korea J.K. Kim, Sunchon National University, Republic of Korea J.M. Lee, Sunchon National University, Republic of Korea |
| Correspondent: | Click to Email |
The etch characteristics of Pd for the fabrication of blue laser and light emitting diodes were investigated by using inductively coupled Ar–based plasma for low damage in underlayer.Up to date, the etch characteristics of Pd was not fully understood, because the suitable gas to form a volatile etch-product was not known due to the chemical inertness of Pd. Furthermore, the control of gas mixture for the low damage in underlying GaN semiconductor is more preferable in order to fabricate high quality optical devices. Therfore, it is important to selection of gas mixture in plasma. Furthermore, it was found that the photoresist was eroded when the ICP souurce power was increased above 100 W, when the Ar plasma were used as active etchant.
When the 50 sccm of Ar was used as etchant gas, the highest etch rate of 60 nm/min was achived at source and table power of 50 W and 200 W, respectively. The etched sidewall was observed to be most anisotropic, where the angle was about 88 degree. When the additional gas, such as Cl2 and CHF3, was added in the Ar plasma, different effect on the etch characteristics were observed, especially for the sidewall angle. On the other hand, when the Ar gas was used, the carrier concentration of the underlying GaN was decreased by two orders of mangnitude due to the etch-damage. However, the addition of Cl2 and CHF3 by 20 %, respectively, the carrier concentration of the etched GaN surface was increased to the value of as-grown sample, maybe due to suppression of the etch-damage. In this presentation, more detailed results about etch-characteristics of Pd will be reported.