Invited Paper TF-WeM2
Microstructure Control in Transition-Metal Nitride Alloy Films via Hybrid HIPIMS/Magnetron Co-sputtering using Selective Metal-Ion Irradiation
Wednesday, December 10, 2014, 8:20 am, Room Makai
| Session: |
Thin Film Synthesis and Characterization II |
| Presenter: |
Ivan Petrov, Linköping University, Sweden, University of Illinois at Urbana-Champaign |
| Authors: |
Greczynski, Linköping University, Sweden
Lu, Linköping University, Sweden
Jensen, Linköping University, Sweden
I. Petrov, Linköping University, Sweden, University of Illinois at Urbana-Champaign
J. Greene, Linköping University, Sweden, University of Illinois at Urbana-Champaign
Kölker, CemeCon AG, Germany
Bolz, CemeCon AG, Germany
Schiffers, CemeCon AG, Germany
Lemmer, CemeCon AG, Germany
L. Hultman, Linköping University, Sweden
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| Correspondent: |
Click to Email |
It was realized early on in the HIPIMS literature1 that there exist a time separation between the Ar and metal-ion dominated fluxes at the substrate which opens the possibility for selection one of the components for ion-assisted by using a pulsed bias voltage with suitable synchronization. Here, we explore systematically this avenue by using pseudobinary TiN-based model systems TiMeN (i.e. TiAlN, TiSiN, and TiTaN) to carry out experiments in a hybrid configuration with one target powered by HIPIMS, the other operated in DCMS2,3 mode and probe the effects of (i) metal versus rare-gas ion irradiation as well as (ii) the type of metal ion used (Ti vs Me). We employ a metastable NaCl-structure Ti0.39Al0.61N as a model system to demonstrate that switching from Ar+- to Al+-dominated bombardment eliminates phase separation, minimizes renucleation during growth, reduces the high concentration of residual point defects, and thus results in dense, single-phase, stress-free films.4 For metastable alloys, TiAlN and TiSiN, mechanical properties are shown to be determined by the average metal-ion momentum transfer per deposited atom 〈pd〉.5 Irradiation with lighter metal-ion (Me = Al+ or Si+ during Me-HIPIMS/Ti-DCMS) procures fully-dense single-phase cubic Ti1-x(Me)xN films. In contrast, with higher-mass film constituents such as Ti, 〈pd〉. Easily exceeds the threshold necessary for phase segregation which results in precipitation of second w-AlN or Si3N4 phases. With the TiTaN system we show that synchronized pulsed ion bombardment in the hybrid system with the heavy-metal ions (Ta) permits to grow dense, hard, smooth, and stress-free thin films at lowered substrate temperature, with no external heating.6 Overall, we demonstrate that using synchronous bias to select the metal-rich portion of the ion flux opens new dimension for ion-assisted growth in which momentum can be tuned by selection of the metal ion in the hybrid/cosputtering configuration and stresses can be eliminated/reduced since the metal ion is a component of the film.
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1K. Macák, V. Kouznetsov, J. Schneider, U. Helmersson, and I. Petrov, JVSTA 18 (2000) 1533-1537
2G. Greczynski, J. Lu, M. Johansson, J. Jensen, I. Petrov, J.E. Greene, and L. Hultman, Surf. Coat. Technol. 206 (2012) 4202
3G. Greczynski, J. Lu, M. Johansson, J. Jensen, I. Petrov, J.E. Greene, and L. Hultman, Vacuum 86 (2012) 1036
4G. Greczynski, J. Lu, J. Jensen, I. Petrov, J.E. Greene, S. Bolz, W. Kölker, Ch. Schiffers, O. Lemmer and L. Hultman, JVSTA 30 (2012) 061504-1
5G. Greczynski, J. Lu, J. Jensen, I. Petrov, J.E. Greene, S. Bolz, W. Kölker, Ch. Schiffers, O. Lemmer and L. Hultman, Thin Solid Films, 556 (2014) 87
6G. Greczynski, J. Lu, I. Petrov, J.E. Greene, S. Bolz, W. Kölker, Ch. Schiffers, O. Lemmer and L. Hultman, JVSTA 32 (2014) 041515