Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014)
    Thin Films Wednesday Sessions
       Session TF-WeE

Paper TF-WeE10
Preparation of Ce-doped Hafnium Oxide Thin Films by Sol-Gel Method

Wednesday, December 10, 2014, 8:40 pm, Room Makai

Session: Thin Film Synthesis and Characterization III
Presenter: Luis Garcia-Cerda, Research Center on Applied Chemistry, Mexico
Authors: L.A. Garcia-Cerda, Research Center on Applied Chemistry, Mexico
A. Puente, Research Center on Applied Chemistry, Mexico
S. Galvez-Barboza, Center for Research and Advanced Studies of the National Polytechnic Institute
L.A. Gonzalez, Center for Research and Advanced Studies of the National Polytechnic Institute
Correspondent: Click to Email

Mono and multilayer Ce-doped hafnium oxide thin films were deposited on silicon wafers and quartz by spin-coating technique using a solution prepared by solgel with hafnium chloride, cerium nitrate, citric acid and ethylene glycol as starting materials. Ce-doped HfO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 500, 700 and 900 °C. The thin films were then characterized for structural, surface morphological and optical properties by means of X-ray diffraction (XRD), Atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical absorption. X-ray diffraction analysis indicated that the cubic HfO2 films could be obtained by annealing at 500 °C. AFM and SEM images revealed well defined particles which are highly influenced by annealing temperatures.