| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014) | |
| Thin Films | Tuesday Sessions |
| Session TF-TuP |
| Session: | Thin Films Poster Session |
| Presenter: | JongHyun Seo, Korea Aerospace University, Republic of Korea |
| Authors: | J.H. Seo, Korea Aerospace University, Republic of Korea J.-H. Jeon, Korea Aerospace University, Republic of Korea HH. Choe, Korea Aerospace University, Republic of Korea J.H. Yoon, Korea Aerospace University, Republic of Korea H.-S. Kim, Korea Aerospace University |
| Correspondent: | Click to Email |
We fabricated the back channel etch type copper/molybdenum alloy/Indium gallium zinc oxide thin film transistors using only wet patterning in phosphoric acid based copper etchant. Compared with pure molybdenum S/D electrode, New Mo alloy electrodes showed better TFT performances both in mobility and on current. The mobility was increased by 50% and on current increased up to 100% compared to those of pure molybdenum electrodes. Little is know about the effect of S/D electrode material on the electrical properties of amorphous IGZO oxide TFTs.
A modeling based on the reduced elastic strain energy by reduction in biaxial elastic modulus of the Mo alloy film is proposed to explain enhanced electrical properties of Cu/Mo alloy/IGZO TFT. The effects of alloy percentage in the alloy, chemical additives on the electrical properties of back channel etch type Cu/Mo alloy/IGZO oxide TFTs were investigated using surface analysis and electrochemical methods.