| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014) | |
| Thin Films | Tuesday Sessions |
| Session TF-TuP |
| Session: | Thin Films Poster Session |
| Presenter: | Daniel Kropman, Tallinn University of Technology, Estonia |
| Authors: | D. Kropman, Tallinn University of Technology, Estonia T. Laas, Tallinn Universrsity, Estonia |
| Correspondent: | Click to Email |
The effect of ultrasonic treatment (UST) on the defect structure of the Si–SiO2 system by means of electron spin resonance (ESR), selective etching, MOS capacitance technique and secondary ions mass-spectroscopy (SIMS) is presented.[1,2]. The non-monotonous dependence of the defect densities on the US wave intensity has been observed. The influence of the UST frequency on the ESR signal intensity of the defect centres depended on the defects type and may be caused by vibration energy dissipation, which are a function of defect centres type. The influence of the UST on the Si–SiO2 interface properties depends on the oxide thickness and crystallographic orientation. The density of point defects and absorbed impurities at the Si–SiO2 interface can be reduced and its electrical parameters improved by an appropriate choice of the UST and oxidation condition.UST is widly used in medicine, not only for diagnostic,but for cancer treatment too. UST influence on inorganic and organic materials have common properties. These allow to suggest that UST may be used in biotechnology for materials properties modification.
References
[1] D.Kropman,V.Poll,L.Tambek,T.Karner,U.Abru.Ultrasonics 36(1998)1021
[2] D.Kropman,S.Dolgov.Physica Stat.Solidi©9(2012)2173-2176.