Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014)
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP38
Electrical Transport Properties and Photodetection Performances of n-Type NC-FeSi2/i-UNCD/a-C/p-Type Si Heterojunction Photodiodes at Low Temperatures

Tuesday, December 9, 2014, 4:00 pm, Room Mauka

Session: Thin Films Poster Session
Presenter: Nathaporn Promros, King Mongkut’s Institute of Technology Ladkrabang, Thailand
Authors: N. Promros, King Mongkut’s Institute of Technology Ladkrabang, Thailand
K. Hanada, Kyushu University, Japan
P. Sittimart, King Mongkut’s Institute of Technology Ladkrabang, Thailand
M. Takahara, Kyushu University, Japan
T. Hanada, Kyushu University, Japan
L. Chen, Kyushu University, Japan
T. Yoshitake, Kyushu University, Japan
Correspondent: Click to Email
n-Type nanocrystalline iron disilicide (NC-FeSi2)/intrinsic ultrananocrystalline diamond/amorphous carbon composite (i-UNCD/a-C)/p-type Si heterojunctions have been successfully fabricated and their current - voltage characteristics were measured at low temperatures range from 300 down to 60 K. i-UNCD/a-C and n-type NC-FeSi2 layers were deposited by coaxial arc plasma deposition and pulsed laser deposition, respectively. We investigated their carrier conduction mechanism on the basis of thermionic emission theory and their near infrared photodetection using a 6 mW, 1.31μm laser. The predominant conduction mechanism through the heterojunctions at 300 - 200 K and 200 - 60 K are recombination and tunneling processes, respectively. At 60 K, the ratio between photocurrent and dark current became three orders of magnitudes. The detectivety is 8.8 × 1011 cmHz1/2/W at -1 V, which is comparable with the values of existing NIR photodiodes at the same temperature.