| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014) | |
| Thin Films | Tuesday Sessions |
| Session TF-TuP |
| Session: | Thin Films Poster Session |
| Presenter: | Yong-Zhe Zhu, Department of Physics, Yanbian University, Yanji city, 133000, China |
| Authors: | Q. Quan, Department of Physics, Yanbian University, Yanji city, 133000, China S. Song, Department of Physics, Yanbian University, Yanji city, 133000, China Z. Zhang, Department of Physics, Yanbian University, Yanji city, 133000, China L. Li, Department of Physics, Yanbian University, Yanji city, 133000, China Z. Zhu, Department of Physics, Yanbian University, Yanji city, 133000, China |
| Correspondent: | Click to Email |
In the process of one-dimensional metal wire growth on the Si(5 5 12) surface with ultra-high vacuum scanning tunneling microscopy, Si(3 3 7)-4 × 1 structure is discovered. It is found that Si(3 3 7)-4 × 1 is a ultra stable structure with low defect density. It can be expected as a good template for nanostructure growth. However, up to now, there is no routine method to fabricate Si(3 3 7)-4 × 1. Therefore, it is necessary to study the formation reasons of Si(3 3 7)-4 × 1 surface and then fabricate this structure. The possibility is considered in two aspects: Firstly, is it induced only by high temperature annealing? Secondly, is it due to the residual C existed in the UHV-STM chamber? For this purpose, results from four experimental studies are analyzed: O ne is heating several kind s of Si(5 5 12) vicinal surface at high temperatures, and the others are adsorbing Ge, C2H2, and O2 on Si(5 5 12)-2 × 1 surface, respectively. The orientation dependence of this kind of structural phase transition from Si(5 5 12)-2 × 1 to Si(3 3 7)-4 × 1 has been studied as well. To achieve this structural phase transition, an energy barrier needs to be overcome, and a large amount of atoms must be moved to meet the orientation difference, which is performed by surface melting process via high temperature annealing. This phase transition has the orientation dependence but is not induced by the adsorption of carbon. This research was supported by the National Natural Science Foundation of China (Grant No. 10964014).
References:
【1】A. A. Baski, et al., A Stable High-Index Surface of Silicon: Si(5 5 12), Science, 1995, 269, 1556
【2】Yong-Zhe Zhu, et al., Scanning Tunneling Microscopy Study on the Ultrastable Si(3 3 7)-4×1 Terrace Formed by Annealing Si(5 5 12)-2×1 at an Elevated Temperature, Journal of the Korean Physical Society, 2010, Vol. 57, No. 1, 120
【3】Hidong Kim, et al., Origin of ordered two-dimensional structure of Si(337)-4x1 transformed from Si(5 5 12)-2x1，Phys. Rev. B, 2010, 81, 245422