| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014) | |
| Thin Films | Tuesday Sessions |
| Session TF-TuE |
| Session: | Thin Film Synthesis & Characterization I |
| Presenter: | Anil Khairnar, North Maharashtra University Jalgaon, Maharashtra, India-425001, India |
| Authors: | A.G. Khairnar, North Maharashtra University Jalgaon, Maharashtra, India-425001, India P.A. Deshmukh, North Maharashtra University Jalgaon, Maharashtra, India-425001, India V.S. Patil, North Maharashtra University Jalgaon, Maharashtra, India-425001, India K.S. Agrawal, North Maharashtra University Jalgaon, Maharashtra, India-425001, India A.M. Mahajan, North Maharashtra University Jalgaon, Maharashtra, India-425001, India |
| Correspondent: | Click to Email |
Abstract:
The ever increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. However, as we further reduce the device dimension, transistor with conventional structure and material is attaining its fundamental scaling limit. Beyond the 22 nm node fundamental as well as practical constraints will limit the maximum performance achievable by these scaled transistors. The integration of high-k gate dielectric provides a promising solution to continue improving the device performance, as their higher k-value allows a physically thicker layer while aiming the same capacitance and Equivalent Oxide Thickness (EOT). This study primarily focused on studying the electrical properties of high-k MOS capacitors with metal gate electrodes. In this work, we have deposited HfO2 and Al2O3 thin film deposited on silicon substrate by RF sputtering technique and Plasma enhanced atomic layer deposition system (PEALD) respectively. The deposition of HfO2 is confirmed by FTIR measurement. Current density vs voltage characteristics have been studied by I-V measurement further comparative study of current conduction mechanisms is done. In MOS structure due to the charge trapping and interface characteristics of dielectric films causes leakage current in dielectrics. The density of leakage current has been investigated and analyzed, by current-voltage and conduction mechanisms. Among the various conduction mechanisms HfO2 and Al2O3 film on Si follows the Fowler Nordheim (FN) tunneling. The Poole Frenkel (PF) emission, Schottky emission (SE) and Trap assist tunneling (TAT) also studied. The barrier height (фB) is calculated of experimental work through Fowler Nordheim tunneling mechanism.
Keywords - HfO2, Al2O3, high-k, leakage current density, FN tunneling.