Invited Paper TF-MoM6
Growth of Large-Area 2D Transition Metal Dichalcogenides
Monday, December 8, 2014, 10:20 am, Room Makai
The direct-gap property of the semiconducting transition metal dichalcogenide (TMD) monolayers is attractive for optoelectronics and energy harvesting. Here I would like to discuss the synthetic approaches to obtain crystalline and sub-mm sized MoS2, WSe2 and WS2 monolayers directly on arbitrary substrates using vapor phase reaction between metal oxides and S or Se powders.1-2 These layer materials can be transferred to desired substrates, making them suitable building blocks for constructing multilayer stacking structures. By using micro-beam X-ray photoelectron spectroscopy, we report the determination of band offsets in TMD heterostructures.3 These physical quantities are fundamentally important for novel devices based on heterostructures formed between dissimilar TMDs. Some possible applications based on TMD heterostructures will be discussed. References
1 Huang, J. K. et al. Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications. Acs Nano 8, 923 (2014).
2 Lee, Y. H. et al. Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition. Advanced Materials 24, 2320 (2012).
3 M.-H. Chiu et al. Determination of band alignment in transition metal dichalcogenides heterojunctions. arXiv:1406.5137