| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014) | |
| Nanomaterials | Tuesday Sessions |
| Session NM-TuP |
| Session: | Nanomaterials Poster Session |
| Presenter: | JoséLuis González Arango, Universidad de Pamplona, Colombia |
| Authors: | J.L. González Arango, Universidad de Pamplona, Colombia P. Freitas Gomes, Universidade Federal de Goias, Campus Jataí, Brazil |
| Correspondent: | Click to Email |
Mechanical deformation (strain) plays an important role in the electronic, optical and transport properties of semiconductor quantum dots (SQDs). Epitaxial SQDs have a spatial deformation profile caused by the mismatch of the lattice parameters of the materials involved. This deformation creates an elastic energy which is one determinant fact in the SQDs grown on Stranski-Kastranow mode. The deformation also changes the potential profiles experienced by the carriers (electron and hole), requiring consideration of them when one calculates the electronics eingenstates. This shows the importance of the deformation profile on the properties of the nanostructures for future applications in electronic and optical devices.
In this work we show one more tool for the calculation of mechanical deformation on Si/Ge semiconductor quantum dots. We used a numerical simulation package to solve the differential equations for the deformation, using Continuous Elasticity Theory. We studied two systems: capped and uncapped. The cap layer is the Si layer grown above the Ge QDs layer. On the capped system, we observed a larger biaxial deformation on the Ge layer plane, when compared with the uncapped system. We also observed the deformation on the Si layer underneath the Ge layer. Again, on the capped system this biaxial deformation was also larger. With these deformation profile, we can also calculate the stress tensor and the elastic energy profiles.