| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014) | |
| Nanomaterials | Tuesday Sessions |
| Session NM-TuM |
| Session: | Nano Devices |
| Presenter: | Mitsuki Ito, Tokyo University of Agriculture & Technology, Japan |
| Authors: | M. Ito, Tokyo University of Agriculture & Technology, Japan K. Morihara, Tokyo University of Agriculture & Technology, Japan T. Toyonaka, Tokyo University of Agriculture & Technology, Japan K. Takikawa, Tokyo University of Agriculture & Technology, Japan J. Shirakashi, Tokyo University of Agriculture & Technology, Japan |
| Correspondent: | Click to Email |
High-throughput nanogap formation is reported for simultaneously fabricating arrays of integrated nanogaps. Using this method, series-connected 10 nanogaps with symmetrical and asymmetrical shapes were integrated. The integration was achieved using electromigration (EM) induced by First, series-connected 10 Ni nanogaps having symmetrical shape were fabricated by electron-beam (EB) lithography and lift-off process. After performing the activation with final preset current IS = 300 nA into the 10 nanogaps, the separation of the gaps was reduced to less than 10 nm. This tendency is quite similar to that of series connected 10 nanogaps having asymmetrical shape. Therefore, it is indicated that integration of nanogaps using activation method hardly depends on the shape of nanogap electrodes. Furthermore, activation method was also applied into 30 nanogaps connected in series, for the mass production of identical nanogaps. As a result, the distance between the Ni nanogap electrodes was totally and completely controlled by performing the activation. These results clearly suggest that the integrated nanogaps can be simultaneously fabricated by the activation procedure.