Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014)
    Nanomaterials Monday Sessions
       Session NM-MoM

Paper NM-MoM3
Si, C and SiCx Nanostructures and Nano Devices Fabricated Using In Situ Liquid Cell TEM Technology

Monday, December 8, 2014, 9:20 am, Room Hau

Session: Nano Fabrication
Presenter: Xin Chen, East China University of Science and Technology, China
Authors: X. Chen, East China University of Science and Technology, China
L.H. Zhou, East China University of Science and Technology
P. Wang, East China University of Science and Technology
H.L. Cao, East China University of Science and Technology
X.L. Miao, East China University of Science and Technology
F.F. Wei, East China University of Science and Technology
Correspondent: Click to Email

Silicon, carbon and SiCx nano structures were fabricated using liquid phase electron beam induced deposition (LP-EBID) technology . SiCl4, CH2Cl2, and SiCl4 in CH2Cl2 solutions of different concentrations were used as the liquid precursors, which were sealed between two Si3N4 window grids in home made in situ TEM liquid cells. JEOL TEM systems operating under a 200 keV electron acceleration voltage were used for the deposition. Focused electron beams of 0.28 to ~40 nA were used to decompose the precursors and deposit the nano structures on the Si3N4 window substrates.

With the beam focused on a fixed location for a certain time, nano dots have been deposited, with sizes ranging from <60 nm to ~500 nm depending on the deposition parameters, with well size controllability. Generally, the nano dot diameter increases with beam exposure time and beam intensity, but was insensitive to the composition ratio of these precursors. Under the higher beam current, the nano particle growth was observed to be retarded. The general growth trend is attributed to a secondary electron effect, while the retarded growth is attributed to the influence of the primary electrons.

By using scanning electron beams, nano wires of different sizes have been deposited. Besides a uniform straight line growth, we have also observed a branched growth behavior under certain deposition conditions. The secondary electron mechanism can be used to explain these growth behaviors.

The in situ cells were later dissembled, with platinum nano electrodes deposited on the two ends of the SiCx nano wires using a FEI Dual Beam 235 focused ion beam system, forming nano electronic devices. SEM and AFM imaging analysis showed good structural morphology of the devices, and I-V property test have been made on the devices. Issues of liquid bubbling under electron beam irradiation, image resolution and structural stability of the deposited nano structures made by in situ liquid cell TEM technology have been further discussed.